⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30515424 | 0.82 | — | — | |
| SCHEMBL29586357 | 0.82 | — | — | |
| SCHEMBL497877 | 0.82 | — | — | |
| SCHEMBL8205911 | 0.82 | — | — | |
| SCHEMBL4280836 | 0.82 | — | — | |
| SCHEMBL9774048 | 0.82 | — | — | |
| SCHEMBL2789904 | 0.82 | — | — | |
| SCHEMBL31288973 | 0.82 | — | — | |
| SCHEMBL560998 | 0.82 | — | — | |
| SCHEMBL29814754 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1547 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12557305-B2 | Integrated chip inductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-17 | — | — | US | claimed |
| US-12484329-B2 | Semiconductor element and electronic apparatus | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2025-11-25 | — | — | US | claimed |
| US-20250311635-A1 | METHOD OF FORMING A BOTTOM ELECTRODE OF A MAGNETORESISTIVE RANDOM ACCESS MEMORY CELL | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-10-02 | — | — | US | claimed |
| US-12335642-B2 | Solid-state imaging device and electronic device | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2025-06-17 | — | — | US | claimed |
| WO-2025094350-A1 | LIGHT DETECTION DEVICE | ソニーセミコンダクタソリューションズ株式会社 | 2025-05-08 | — | — | WO | claimed |
| CN-113206060-B | Inductor structure and method of forming the same | 台湾积体电路制造股份有限公司 | 2025-04-25 | — | — | CN | claimed |
| EP-3584821-B1 | COMPOUND SEMICONDUCTOR LAMINATE SUBSTRATE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR ELEMENT | SHINETSU CHEMICAL CO (JP) | 2025-03-12 | — | — | EP | claimed |
| US-20240413075-A1 | INTERCONNECT STRUCTURE HAVING HEAT DISSIPATION CAPABILITY AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-12-12 | — | — | US | claimed |
| US-20240348944-A1 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE | SONY SEMICONDUCTOR SOLUTIONS CORP (JP) | 2024-10-17 | — | — | US | claimed |
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | claimed |
| US-6204657-B1 | Temperature compensated closed-loop hall effect current transformer | CROWN AUDIO, INC. | 2001-03-20 | — | — | US | claimed |
| US-6168081-B1 | Method and apparatus for reading invisible symbol | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-01-02 | — | — | US | claimed |
| EP-0919995-A2 | Optical recording and playback apparatus | NIKON CORPORATION (JP) | 1999-06-02 | — | — | EP | claimed |
| US-5892222-A | Broadband multicolor photon counter for low light detection and imaging | LORAL FAIRCHILD CORPORATION (US) | 1999-04-06 | — | — | US | claimed |
| CN-1198866-A | Thermal imaging system | SECR DEFENCE (GB) | 1998-11-11 | — | — | CN | claimed |
| US-5289122-A | Magnetic sensor for detecting coarse and fine magnetic patterns | MURATA MFG. CO., LTD. (JP) | 1994-02-22 | — | — | US | claimed |
| CN-2107742-U | HEATING DEVICE FOR CAMERA PROTECTIVE HOOD | TELEVISION TECH INST TIANJIN C (CN) | 1992-06-17 | — | — | CN | claimed |
| US-4912536-A | Charge accumulation and multiplication photodetector | NORTHROP CORPORATION (US) | 1990-03-27 | — | — | US | claimed |
| US-4898834-A | Open-tube, benign-environment annealing method for compound semiconductors | AMBER ENGINEERING, INC. (US) | 1990-02-06 | — | — | US | claimed |
| EP-0168312-B1 | METHOD OF MAKING HALL EFFECT SENSORS IN THIN FILMS | COMMISSARIAT A L'ENERGIE ATOMIQUE (FR) | 1988-12-28 | — | — | EP | claimed |