⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5904501 | 1.00 | — | — | |
| SCHEMBL3856685 | 0.87 | — | — | |
| SCHEMBL6036904 | 0.87 | — | — | |
| SCHEMBL29663950 | 0.87 | — | — | |
| SCHEMBL730930 | 0.82 | — | — | |
| SCHEMBL29380788 | 0.82 | — | — | |
| SCHEMBL41821 | 0.82 | — | — | |
| SCHEMBL29615178 | 0.82 | — | — | |
| SCHEMBL8205911 | 0.67 | — | — | |
| SCHEMBL4900346 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 19 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | claimed |
| WO-2023113353-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | 성균관대학교산학협력단 | 2023-06-22 | — | — | WO | claimed |
| US-20220162501-A1 | QUANTUM DOT AND PREPARING METHOD OF THE SAME | Research & Business Foundation Sungkyunkwan University (KR) | 2022-05-26 | — | — | US | claimed |
| US-10033160-B2 | Interband cascade light emitting devices | THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA (US) | 2018-07-24 | — | — | US | claimed |
| US-20170125979-A1 | Interband Cascade Light Emitting Devices | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2017-05-04 | — | — | US | claimed |
| CN-120035200-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-05-23 | — | — | CN | disclosed |
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | disclosed |
| CN-117590298-A | Magnetic detection device, magnetic detection unit, manufacturing method thereof, and magnetic detection system | 旭化成微电子株式会社 | 2024-02-23 | — | — | CN | disclosed |
| US-11764275-B2 | Indium-containing fin of a transistor device with an indium-rich core | INTEL CORPORATION (US) | 2023-09-19 | — | — | US | disclosed |
| WO-2022131498-A1 | ANALYTE DETECTION SYSTEM, AND ANALYTE DETECTION METHOD USING SAME | 주식회사 제우스 | 2022-06-23 | — | — | WO | disclosed |
| US-20220162501-A1 | QUANTUM DOT AND PREPARING METHOD OF THE SAME | Research & Business Foundation Sungkyunkwan University (KR) | 2022-05-26 | — | — | US | disclosed |
| CN-105722612-A | Improved chamber cleaning when using acid chemistries to fabricate microelectronic devices and precursors thereof | 东京毅力科创FSI公司 | 2016-06-29 | — | — | CN | disclosed |
| US-8106440-B2 | Selective high-k dielectric film deposition for semiconductor device | INTEL CORPORATION (US) | 2012-01-31 | — | — | US | disclosed |
| US-20100085112-A1 | Method of Manufacturing a Transistor, and Method of Controlling a Threshold Voltage of the Transistor | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-04-08 | — | — | US | disclosed |
| US-20100078684-A1 | SELECTIVE HIGH-K DIELECTRIC FILM DEPOSITION FOR SEMICONDUCTOR DEVICE | RACHMADY WILLY | 2010-04-01 | — | — | US | disclosed |
| US-7670894-B2 | Selective high-k dielectric film deposition for semiconductor device | INTEL CORPORATION (US) | 2010-03-02 | — | — | US | disclosed |
| US-20090272965-A1 | Selective High-K dielectric film deposition for semiconductor device | INTEL CORPORATION | 2009-11-05 | — | — | US | disclosed |
| US-7202503-B2 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon | INTEL CORPORATION (US) | 2007-04-10 | — | — | US | disclosed |
| US-20060001018-A1 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon | INTEL CORPORATION | 2006-01-05 | — | — | US | disclosed |