SCHEMBL419183

SCHEMBL419183

CO[SiH](CC(F)(F)F)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412419 0.73
SCHEMBL3693288 0.73
SCHEMBL525389 0.71
SCHEMBL3183310 0.71
SCHEMBL8754976 0.71
SCHEMBL2943630 0.69
SCHEMBL5413077 0.69
SCHEMBL65020 0.67
SCHEMBL7257502 0.67
SCHEMBL8851739 0.67 ALDH1A1 (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115356873-B Resin composition, light-shielding film, method for producing light-shielding film, and substrate with barrier ribs 东丽株式会社 2025-04-25 CN disclosed
CN-115427514-B Resin composition, light-shielding film, and substrate with partition wall 东丽株式会社 2024-01-02 CN disclosed
CN-109716491-B Method for manufacturing field effect transistor and method for manufacturing wireless communication device 东丽株式会社 2023-06-09 CN disclosed
CN-111771163-B Negative photosensitive coloring composition, cured film, and touch panel using same 东丽株式会社 2023-06-02 CN disclosed
CN-111295755-B Integrated circuit, method of manufacturing the same, and wireless communication device using the same 东丽株式会社 2023-05-12 CN disclosed
CN-108292630-B Ferroelectric memory element, method for manufacturing the same, memory cell using the same, and wireless communication device using the same 东丽株式会社 2023-04-25 CN disclosed
US-20120282458-A1 WATER-REPELLENT SUBSTRATE AND PROCESS FOR ITS PRODUCTION ASAHI GLASS COMPANY, LIMITED (JP) 2012-11-08 US disclosed
US-20120021177-A1 WATER-REPELLENT SUBSTRATE AND PROCESS FOR ITS PRODUCTION ASAHI GLASS COMPANY, LIMITED (JP) 2012-01-26 US disclosed
US-20090304996-A1 ARTICLE HAVING WATER-REPELLENT SURFACE ASAHI GLASS COMPANY, LIMITED (JP) 2009-12-10 US disclosed
EP-2116518-A1 ARTICLES HAVING WATER-REPELLENT SURFACES Asahi Glass Company, Limited (JP) 2009-11-11 EP disclosed
US-6420269-B2 USEFUL IN PRODUCING SEMICONDUCTOR CHIPS HITACHI CHEMICAL COMPANY, LTD. (JP) 2002-07-16 US disclosed
EP-0820092-A1 CERIUM OXIDE ABRASIVE, SEMICONDUCTOR CHIP, SEMICONDUCTOR DEVICE, PROCESS FOR THE PRODUCTION OF THEM, AND METHOD FOR THE POLISHING OF SUBSTRATES HITACHI CHEMICAL CO., LTD. (JP) 1998-01-21 EP disclosed
EP-0768352-A1 MATERIAL FOR FORMING SILICA-BASE COATED INSULATION FILM, PROCESS FOR PRODUCING THE MATERIAL, SILICA-BASE INSULATION FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE DEVICE HITACHI CHEMICAL CO., LTD. (JP) 1997-04-16 EP disclosed