SCHEMBL4198280

SCHEMBL4198280

CC1(C)CCC1C(N)=O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2844101 0.86 EPHX1 (0.35)
SCHEMBL2841706 0.86 EPHX1 (0.35)
SCHEMBL10793287 0.86 EPHX1 (0.35)
SCHEMBL15541915 0.84 EPHX1 (0.39)
SCHEMBL10793562 0.84 EPHX1 (0.39)
SCHEMBL15540956 0.84 EPHX1 (0.39)
SCHEMBL15827323 0.81 SLC1A2 (0.34)
SCHEMBL16205272 0.81 SLC1A2 (0.34)
SCHEMBL17551908 0.78 SLC1A2 (0.33)
SCHEMBL3147712 0.77

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9543147-B2 Photoresist and method of manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-01-10 US disclosed
US-9502231-B2 Photoresist layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-11-22 US disclosed
US-9460909-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-10-04 US disclosed
US-9436086-B2 Anti-reflective layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-09-06 US disclosed
US-20160155632-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed
US-20160155626-A1 Method for Manufacturing Semiconductor Device TAIWAN SEMICONDUCTOR MFG (TW) 2016-06-02 US disclosed
CN-102656180-B As the feather fan alcohol type triterpene derivative of antiviral drug HETERO RESEARCH FOUNDATION (IN) 2016-04-20 CN disclosed
US-9256128-B2 Method for manufacturing semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-02-09 US disclosed
US-9245751-B2 Anti-reflective layer and method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-26 US disclosed
US-20160013041-A1 Photoresist Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-14 US disclosed
US-20160005595-A1 Photoresist and Method of Manufacture TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-01-07 US disclosed
US-20150111384-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) 2015-04-23 US disclosed
US-20140273457-A1 Anti-Reflective Layer and Method TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2014-09-18 US disclosed
CN-101506736-B Composition containing liquid additive for forming resist underlayer film, underlayer film forming method and semiconductor device manufacture method NISSAN CHEMICAL IND LTD 2013-07-10 CN disclosed
US-8481247-B2 Resist underlayer film forming composition containing liquid additive NISSAN CHEMICAL INDUSTRIES, LTD. 2013-07-09 US disclosed
CN-101076519-B Amide compound and thrombopoietin receptor activator NISSAN CHEMICAL IND LTD 2011-07-20 CN disclosed
US-20090311624-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING LIQUID ADDITIVE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2009-12-17 US disclosed
CN-101506736-A Resist underlayer film forming composition containing liquid additive NISSAN CHEMICAL IND LTD (JP) 2009-08-12 CN disclosed