SCHEMBL424512

SCHEMBL424512

CCC(CC)C(C)(C)CO

nearest known ligand 0.36

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.36
PTGS1 P23219 1/20 0.30
KCNH2 Q12809 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7241677 0.88 TSHR (0.33) TSHR
SCHEMBL13469259 0.78 TSHR (0.33) TSHRPTGS1KCNH2
SCHEMBL13890710 0.77 TSHR (0.38) TSHR
SCHEMBL598355 0.73 TSHR (0.38) TSHR
SCHEMBL8532344 0.73 TSHR (0.35) TSHR
SCHEMBL13079463 0.73
SCHEMBL28113371 0.73
SCHEMBL133093 0.73
SCHEMBL1027763 0.73
SCHEMBL8662366 0.71 DPP4 (0.50) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8895226-B2 Coating composition for DUV filtering, method of forming photoresist pattern using the same and method of fabricating semiconductor device by using the method SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-11-25 US claimed
US-20140205950-A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-07-24 US claimed
US-20120021355-A1 COATING COMPOSITION FOR DUV FILTERING, METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE METHOD SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-01-26 US claimed
US-20250189887-A1 SOLUTION, SOLUTION STORAGE BODY, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2025-06-12 US disclosed
US-12253801-B2 Solution, solution storage body, actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and manufacturing method of semiconductor device FUJIFILM CORPORATION (JP) 2025-03-18 US disclosed
US-11894429-B2 Amorphous metal oxide semiconductor layer and semiconductor device NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2024-02-06 US disclosed
US-20230146966-A1 ELECTROLUMINESCENCE ELEMENT AND METHOD OF MANUFACTURING ELECTROLUMINESCENCE ELEMENT MIKUNI ELECTRON CORPORATION (JP) 2023-05-11 US disclosed
EP-4170722-A1 REVERSED-STRUCTURE ELECTROLUMINESCENCE ELEMENT HAVING COATED INORGANIC TRANSPARENT OXIDE SEMICONDUCTOR ELECTRON TRANSPORT LAYER Mikuni Electron Corporation (JP) 2023-04-26 EP disclosed
CN-115868247-A Inverted structure electroluminescent element with coating type inorganic transparent oxide semiconductor electron transport layer 三国电子有限会社 2023-03-28 CN disclosed
US-20220328635-A1 AMORPHOUS METAL OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2022-10-13 US disclosed
WO-2021261493-A1 REVERSED-STRUCTURE ELECTROLUMINESCENCE ELEMENT HAVING COATED INORGANIC TRANSPARENT OXIDE SEMICONDUCTOR ELECTRON TRANSPORT LAYER 三国電子有限会社 2021-12-30 WO disclosed
US-20090318652-A1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION JSR CORPORATION (JP) 2009-12-24 US disclosed
EP-1961739-A1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION JSR Corporation (JP) 2008-08-27 EP disclosed
EP-1950610-A1 COMPOSITION FOR FORMING UPPER FILM AND METHOD FOR FORMING PHOTORESIST PATTERN JSR Corporation (JP) 2008-07-30 EP disclosed
US-20080124524-A1 Composition For Forming Antireflection Film, Layered Product, And Method Of Forming Resist Pattern JSR CORPORATION (JP) 2008-05-29 US disclosed
US-20080038661-A1 Copolymer and Top Coating Composition JSR CORPORATION (JP) 2008-02-14 US disclosed
CN-101080674-A Composition for forming antireflection film, layered product, and method for forming resist pattern JSR CORP (JP) 2007-11-28 CN disclosed
CN-101031597-A Copolymer and composition for forming upper layer film JSR CORP (JP) 2007-09-05 CN disclosed
EP-1818723-A1 COMPOSITION FOR FORMING ANTIREFLECTION FILM, LAYERED PRODUCT, AND METHOD OF FORMING RESIST PATTERN JSR Corporation (JP) 2007-08-15 EP disclosed
EP-1806370-A1 COPOLYMER AND UPPER FILM-FORMING COMPOSITION JSR Corporation (JP) 2007-07-11 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090318652-A1 NOVEL COMPOUND, POLYMER, AND RESIN COMPOSITION ERCC4, RAD51, RTF1 TSHR 4489/4885PTGS1 3580/4885KCNH2 3464/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.