SCHEMBL4255848

SCHEMBL4255848

CC1=C([Co])CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL409596 0.71
SCHEMBL216231 0.71
SCHEMBL8162371 0.71
SCHEMBL4901878 0.69
SCHEMBL7263423 0.69
SCHEMBL9705999 0.69
SCHEMBL9142119 0.69
SCHEMBL1305709 0.69
SCHEMBL9299246 0.69
SCHEMBL17581083 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US claimed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US claimed
US-20220298625-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2022-09-22 US claimed
US-11384429-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2022-07-12 US claimed
CN-101466863-B Process for forming cobalt-containing materials APPLIED MATERIALS INC 2011-08-10 CN claimed
CN-101466863-A Process for forming cobalt-containing materials APPLIED MATERIALS INC (US) 2009-06-24 CN claimed
US-12564025-B2 Interconnect with redeposited metal capping and method forming same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2026-02-24 US disclosed
CN-119306773-A Novel asymmetric metallocene metal complex and preparation method thereof 苏州源展材料科技有限公司 2025-01-14 CN disclosed
US-20240218503-A1 SELECTIVE COBALT DEPOSITION ON COPPER SURFACES APPLIED MATERIALS, INC. 2024-07-04 US disclosed
US-20240213088-A1 SUBTRACTIVE METALS AND SUBTRACTIVE METAL SEMICONDUCTOR STRUCTURES APPLIED MATERIALS, INC. 2024-06-27 US disclosed
US-11990368-B2 Doped selective metal caps to improve copper electromigration with ruthenium liner APPLIED MATERIALS, INC. (US) 2024-05-21 US disclosed
US-11959167-B2 Selective cobalt deposition on copper surfaces APPLIED MATERIALS, INC. (US) 2024-04-16 US disclosed
US-11923244-B2 Subtractive metals and subtractive metal semiconductor structures APPLIED MATERIALS, INC. (US) 2024-03-05 US disclosed
WO-2009134916-A2 PROCESS FOR FORMING COBALT AND COBALT SILICIDE MATERIALS IN TUNGSTEN CONTACT APPLICATIONS APPLIED MATERIALS, INC. (US) 2009-11-05 WO disclosed
CN-101466863-A Process for forming cobalt-containing materials APPLIED MATERIALS INC (US) 2009-06-24 CN disclosed
CN-101414557-A Plasma surface treatment for Si and metal nanocrystal nucleation APPLIED MATERIALS INC (US) 2009-04-22 CN disclosed
CN-101365821-A Method for depositing metallic film JSR CORP (JP) 2009-02-11 CN disclosed
CN-100423199-C Composition for forming silicon-cobalt film, silicon-cobalt film, and forming method therefor JSR CORP (JP) 2008-10-01 CN disclosed
CN-1868037-A Composition for forming silicon-cobalt film, silicon-cobalt film, and forming method therefor JSR CORP (JP) 2006-11-22 CN disclosed
EP-0110177-B1 SUBSTITUTED CYCLOPENTADIENYL COBALT COMPLEXES AND SYNTHESIS OF PYRIDINE HOMOLOGUES BY MEANS OF THE COMPLEXES DENKI KAGAKU KOGYO KABUSHIKI KAISHA (JP) 1989-03-22 EP disclosed