SCHEMBL4293327

SCHEMBL4293327

CC(c1ccc(O)cc1)c1cc(C(C)c2ccc(O)cc2)c(O)cc1O

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 6/20 0.62
ESR2 Q92731 5/20 0.62
PDCD1 Q15116 1/20 0.62
CD274 Q9NZQ7 1/20 0.62
TYR P14679 1/20 0.58
CYP1A2 P05177 2/20 0.45
CYP3A4 P08684 2/20 0.45
CYP2D6 P10635 2/20 0.45
CYP2C9 P11712 2/20 0.45
ALOX15 P16050 2/20 0.45
CYP2C19 P33261 2/20 0.45
LMNA P02545 2/20 0.40
CHRM1 P11229 2/20 0.40
PTGS1 P23219 2/20 0.40
SLC6A2 P23975 2/20 0.40
ADRA1A P35348 2/20 0.40
PGR P06401 1/20 0.40
CHRM2 P08172 1/20 0.40
ADORA3 P0DMS8 1/20 0.40
AR P10275 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28430447 0.85 TYR (0.79) ESR1ESR2PDCD1CD274TYR
SCHEMBL26670161 0.83 TYR (0.69) ESR1ESR2PDCD1CD274TYR
SCHEMBL29390354 0.83 ESR1 (0.62) ESR1ESR2PDCD1CD274TYR
SCHEMBL27283890 0.79 ESR1 (0.58) ESR1ESR2PDCD1CD274TYR
SCHEMBL16900583 0.79 CYP3A4 (0.74) ESR1ESR2PDCD1CD274TYR
SCHEMBL28613049 0.79 TYR (0.50) ESR1ESR2PDCD1CD274TYR
SCHEMBL26946 0.78 ESR1 (1.00) ESR1ESR2PDCD1CD274TYR
SCHEMBL10593295 0.78 ESR1 (1.00) ESR1ESR2PDCD1CD274TYR
SCHEMBL3760591 0.77 ESR1 (0.68) ESR1ESR2PDCD1CD274TYR
SCHEMBL30485781 0.77 TYR (0.61) ESR1ESR2PDCD1CD274TYR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
US-20240210827-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-06-27 US disclosed
US-20200409263-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-12-31 US disclosed
US-10831101-B2 Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus ASAHI KASEI KABUSHIKI KAISHA (JP) 2020-11-10 US disclosed
US-20190113845-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS ASAHI KASEI KABUSHIKI KAISHA (JP) 2019-04-18 US disclosed
WO-2017170600-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR MANUFACTURING CURED RELIEF PATTERN, AND SEMICONDUCTOR APPARATUS 旭化成株式会社 2017-10-05 WO disclosed
US-7687208-B2 Positive photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2010-03-30 US disclosed
US-7687208-B2 Positive photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2010-03-30 US disclosed
US-20090267239-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-10-29 US disclosed
US-20090267239-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-10-29 US disclosed
US-20090267239-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-10-29 US disclosed
US-20090202794-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-08-13 US disclosed
US-20090202794-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION ASAHI KASEI EMD CORPORATION (JP) 2009-08-13 US disclosed
EP-1923742-A1 POSITIVE PHOTOSENSITIVE RESIN COMPOSITION Asahi Kasei EMD Corporation (JP) 2008-05-21 EP disclosed