Fluoride

Fluoride

SCHEMBL4370118

F.F.F.FC=Cc1ccccc1

nearest known ligand 0.55

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOB P27338 3/20 0.55
NFE2L2 Q16236 4/20 0.52
ALDH1A1 P00352 4/20 0.46
LMNA P02545 2/20 0.46
CYP19A1 P11511 2/20 0.46
MAOA P21397 2/20 0.46
TRPA1 O75762 1/20 0.46
ALOX5 P09917 1/20 0.46
MAPK1 P28482 1/20 0.46
HDAC3 O15379 1/20 0.44
TNKS O95271 1/20 0.44
HDAC4 P56524 1/20 0.44
HDAC1 Q13547 1/20 0.44
HCAR2 Q8TDS4 1/20 0.44
HDAC7 Q8WUI4 1/20 0.44
HDAC2 Q92769 1/20 0.44
HDAC10 Q969S8 1/20 0.44
HDAC11 Q96DB2 1/20 0.44
HDAC8 Q9BY41 1/20 0.44
TNKS2 Q9H2K2 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL4235534 1.00 MAOB (0.55) MAOBNFE2L2ALDH1A1LMNACYP19A1
SCHEMBL177888 0.97
SCHEMBL18867944 0.97
SCHEMBL177889 0.97
SCHEMBL27931027 0.94 MAOB (0.55) MAOBNFE2L2ALDH1A1LMNACYP19A1
Bicarbonate SCHEMBL29353479 0.87 HDAC1 (0.56) MAOBNFE2L2ALDH1A1LMNAMAOA
Thiophene SCHEMBL28450492 0.83 MAOB (0.44) MAOBNFE2L2ALDH1A1LMNACYP19A1
SCHEMBL26604306 0.81 CA1 (0.54) MAOBNFE2L2ALDH1A1CYP19A1MAOA
SCHEMBL27909191 0.81 ALDH1A1 (0.48) MAOBNFE2L2ALDH1A1LMNACYP19A1
(Z)-1,2-Diphenylethene SCHEMBL28006165 0.81 MAOB (0.69) MAOBNFE2L2ALDH1A1LMNACYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100576450-C Make the method for semiconductor device SAMSUNG ELECTRONICS CO LTD 2009-12-30 CN disclosed
US-7582559-B2 Method of manufacturing a semiconductor device having voids in a polysilicon layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-09-01 US disclosed
CN-1779916-A Method of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO LTD (KR) 2006-05-31 CN disclosed
US-20060088987-A1 Method of manufacturing a semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-04-27 US disclosed