⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14411495 | 1.00 | — | — | |
| SCHEMBL5529175 | 0.81 | ESR2 (0.33) | — | |
| SCHEMBL19334610 | 0.75 | — | — | |
| SCHEMBL14535462 | 0.74 | — | — | |
| SCHEMBL10061289 | 0.73 | CYP17A1 (0.33) | — | |
| SCHEMBL12704801 | 0.71 | — | — | |
| SCHEMBL13817672 | 0.70 | SMN1; SMN2 (0.32) | — | |
| SCHEMBL12935407 | 0.70 | MAPK1 (0.34) | — | |
| SCHEMBL110349 | 0.70 | FKBP1A (0.30) | — | |
| SCHEMBL1141747 | 0.69 | MAPT (0.31) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8993212-B2 | Fluorine-containing sulfonic acid salts, photo-acid generator and resist composition and pattern formation method utilizing same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8993212-B2 | Fluorine-containing sulfonic acid salts, photo-acid generator and resist composition and pattern formation method utilizing same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2015-03-31 | — | — | US | disclosed |
| US-8663903-B2 | Top coating composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2014-03-04 | — | — | US | disclosed |
| US-8663903-B2 | Top coating composition | CENTRAL GLASS COMPANY, LIMITED (JP) | 2014-03-04 | — | — | US | disclosed |
| US-20130216960-A1 | Water Repellent Additive for Immersion Resist | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-08-22 | — | — | US | disclosed |
| US-20130216960-A1 | Water Repellent Additive for Immersion Resist | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-08-22 | — | — | US | disclosed |
| US-8513457-B2 | Fluorine-containing compound, fluorine-containing polymer, negative-type resist composition, and patterning process using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-08-20 | — | — | US | disclosed |
| US-8513457-B2 | Fluorine-containing compound, fluorine-containing polymer, negative-type resist composition, and patterning process using same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2013-08-20 | — | — | US | disclosed |
| US-20130209938-A1 | Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same | CENTRAL GLASS COMPANY, LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20130209938-A1 | Fluorine-Containing Sulfonic Acid Salts, Photo-Acid Generator And Resist Composition And Pattern Formation Method Utilizing Same | CENTRAL GLASS COMPANY, LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-20090011199-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Negative-Type Resist Composition, and Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2009-01-08 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311507-A1 | Fluorine-Containing Compound, Fluorine-Containing Polymer, Postive-Type Resist Composition, And Patterning Process Using Same | CENTRAL GLASS COMPANY, LIMITED (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081293-A1 | Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070078269-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| EP-1767992-A1 | Positive resist composition for immersion exposure and pattern forming method using the same | FUJIFILM Corporation (JP) | 2007-03-28 | — | — | EP | disclosed |
| EP-1764647-A2 | Positive resist composition for immersion exposure and pattern-forming method using the same | FUJIFILM Corporation (JP) | 2007-03-21 | — | — | EP | disclosed |