SCHEMBL439660

SCHEMBL439660

COCC=O.[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6782 0.96
SCHEMBL1024872 0.93
SCHEMBL107064 0.93
SCHEMBL7806168 0.93
SCHEMBL8668896 0.93
SCHEMBL19531 0.93
SCHEMBL16193434 0.93
SCHEMBL787284 0.93
SCHEMBL21405143 0.93
SCHEMBL8454761 0.93

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 253 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4413085-A1 SILICON-AND ZINC-CONTAINING COUPLING AGENT FOR CELLULOSIC MATERIAL-POLYMER COMPOSITES Arkema, Inc. (US) 2024-08-14 EP claimed
CN-118318010-A Coupling agents containing silicon and zinc for cellulosic material-polymer composites 阿科玛股份有限公司 2024-07-09 CN claimed
WO-2023059592-A1 SILICON-AND ZINC-CONTAINING COUPLING AGENT FOR CELLULOSIC MATERIAL-POLYMER COMPOSITES ARKEMA INC. (US) 2023-04-13 WO claimed
US-20220056275-A1 SILICON- AND ZINC-CONTAINING COUPLING AGENT FOR CELLULOSIC MATERIAL-POLYMER COMPOSITES ARKEMA INC. 2022-02-24 US claimed
US-8840985-B2 Composition for forming inorganic pattern and method for forming inorganic pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2014-09-23 US claimed
US-7858151-B2 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2010-12-28 US claimed
US-7491575-B2 Fabricating zinc oxide semiconductor using hydrolysis XEROX CORPORATION (US) 2009-02-17 US claimed
US-7410631-B2 Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom APS LABORATORY (US) 2008-08-12 US claimed
US-20080032443-A1 Fabricating Zinc oxide semiconductor using hydrolysis XEROX CORPORATION 2008-02-07 US claimed
US-7153898-B2 Metal oxide sols as nanoscale additives for polymers APS LABORATORY (US) 2006-12-26 US claimed
US-20060135669-A1 Preparation of metal chalcogenide nanoparticles and nanocomposites therefrom APS LABORATORY 2006-06-22 US claimed
US-6955771-B2 Metal oxide sols as nanoscale additives for polymers APS LABORATORY (US) 2005-10-18 US claimed
WO-2005081789-A2 Formation of CIGS Absorber Layer by Atomic Layer Deposition NANOSOLAR, INC. (US) 2005-09-09 WO claimed
US-20050186342-A1 Elements of groups IB, IIIA, VIB formed by placing a substrate in a treatment chamber, performing atomic layer deposition of a group IB element and/or group IIIA elements from separate sources onto a substrate to form a film, group VIA element is then incorporated into the film; solar cell; lamination NANOSOLAR, INC. (US) 2005-08-25 US claimed
WO-2005035668-A2 PREPARATION OF METAL NANOPARTICLES AND NANOCOMPOSITES THEREFROM APS LABORATORY (US) 2005-04-21 WO claimed
US-6838486-B2 Preparation of metal nanoparticles and nanocomposites therefrom APS LABORATORY (US) 2005-01-04 US claimed
US-20040242740-A1 Metal oxide sols as nanoscale additives for polymers RYANG HONG-SON (US) 2004-12-02 US claimed
US-20040167257-A1 PREPARATION OF METAL NANOPARTICLES AND NANOCOMPOSITES THEREFROM APS LABORATORY 2004-08-26 US claimed
US-20040159824-A1 METAL OXIDE SOLS AS NANOSCALE ADDITIVES FOR POLYMERS APS LABORATORY 2004-08-19 US claimed
WO-2004063288-A1 METAL OXIDE SOLS AS NANOSCALE ADDITIVES FOR POLYMERS APS LABORATORY (US) 2004-07-29 WO claimed