SCHEMBL4397528

SCHEMBL4397528

O=C1CCCN1CCCCO

nearest known ligand 0.49

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 5/20 0.49
MEN1 O00255 2/20 0.49
PKM P14618 1/20 0.49
TSHR P16473 1/20 0.48
ADRA1B P35368 6/20 0.48
ADRA1A P35348 2/20 0.46
PIK3CD O00329 1/20 0.46
RAB9A P51151 3/20 0.43
NPC1 O15118 2/20 0.43
POLB P06746 1/20 0.42
TDP1 Q9NUW8 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22042597 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL22042609 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL22798981 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL22799085 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL22799028 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL22799156 0.98 KMT2A (0.47) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL8538168 0.94 KMT2A (0.44) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL312170 0.94 KMT2A (0.50) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL8071932 0.92 ADRA1B (0.43) KMT2AMEN1PKMTSHRADRA1B
SCHEMBL10981771 0.92 ADRA1B (0.43) KMT2AMEN1PKMTSHRADRA1B

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5851274-A Ink jet ink compositions and processes for high resolution and high speed printing XEROX CORPORATION (US) 1998-12-22 US claimed
EP-0853108-A1 Ink jet ink compositions and processes for high resolution and high speed printing XEROX CORPORATION (US) 1998-07-15 EP claimed
EP-0124274-B1 ELECTRON BEAM SENSITIVE MIXTURE RESIST GAF CORPORATION (US) 1988-06-22 EP claimed
EP-0088977-B1 ELECTRON BEAM SENSITIVE RESIST GAF CORPORATION (US) 1988-06-01 EP claimed
EP-0126652-B1 ELECTRON BEAM SENSITIVE MIXTURE RESIST GAF CORPORATION (US) 1987-04-22 EP claimed
EP-0126652-A1 Electron beam sensitive mixture resist GAF CORPORATION (US) 1984-11-28 EP claimed
EP-0124274-A2 Electron beam sensitive mixture resist GAF CORPORATION (US) 1984-11-07 EP claimed
US-4448875-A HALF-ESTER OR -AMIDE OF ALKYL VINYL ETHER-MALEIC ANHYDRIDE COPOLYMER GAF CORPORATION (US) 1984-05-15 US claimed
EP-0088977-A2 Electron beam sensitive resist GAF CORPORATION (US) 1983-09-21 EP claimed
US-4375398-A CROSSLINKING, VINYL ETHER GAF CORPORATION (US) 1983-03-01 US claimed
US-12447752-B2 Ink jet recording method and ink jet recording apparatus CANON KABUSHIKI KAISHA (JP) 2025-10-21 US disclosed
US-20240408863-A1 INK JET RECORDING METHOD AND INK JET RECORDING APPARATUS CANON KK (JP) 2024-12-12 US disclosed
US-12018121-B2 (Poly)alkylene glycol-containing compound NIPPON SHOKUBAI CO., LTD. (JP) 2024-06-25 US disclosed
US-20230158809-A1 INK JET RECORDING METHOD AND INK JET RECORDING APPARATUS CANON KABUSHIKI KAISHA (JP) 2023-05-25 US disclosed
US-20220073678-A1 (POLY)ALKYLENE GLYCOL-CONTAINING COMPOUND NIPPON SHOKUBAI CO., LTD. (JP) 2022-03-10 US disclosed
EP-0124274-A2 Electron beam sensitive mixture resist GAF CORPORATION (US) 1984-11-07 EP disclosed
US-4448876-A Electron beam sensitive resist GAF CORPORATION (US) 1984-05-15 US disclosed
US-4448875-A HALF-ESTER OR -AMIDE OF ALKYL VINYL ETHER-MALEIC ANHYDRIDE COPOLYMER GAF CORPORATION (US) 1984-05-15 US disclosed
EP-0088977-A2 Electron beam sensitive resist GAF CORPORATION (US) 1983-09-21 EP disclosed
US-4375398-A CROSSLINKING, VINYL ETHER GAF CORPORATION (US) 1983-03-01 US disclosed