SCHEMBL4400972

SCHEMBL4400972

C=C(C)C(=O)OC1(CCCC)CCCCC1OC

nearest known ligand 0.34

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4406138 0.92 ALDH1A1 (0.30)
SCHEMBL4399265 0.89 TSHR (0.33) TSHR
SCHEMBL24760637 0.88 TSHR (0.30) TSHR
SCHEMBL955117 0.87 ALDH1A1 (0.32)
SCHEMBL20382234 0.86 DPP4 (0.34)
SCHEMBL4345289 0.84 TSHR (0.36) TSHR
SCHEMBL4406146 0.82 TSHR (0.36) TSHR
SCHEMBL4406141 0.81
SCHEMBL9244832 0.80 TSHR (0.36) TSHR
SCHEMBL4400976 0.80 TSHR (0.36) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-106980235-A Chemically amplified photoresist composition and process for its use and its application method 国际商业机器公司 2017-07-25 CN claimed
CN-102472971-B chemically amplified photoresist composition and method of use thereof 国际商业机器公司 2016-12-07 CN claimed
CN-106980235-A Chemically amplified photoresist composition and process for its use and its application method 国际商业机器公司 2017-07-25 CN disclosed
US-8298746-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-10-30 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8173352-B2 Resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-05-08 US disclosed
US-8168366-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-05-01 US disclosed
US-8168366-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-05-01 US disclosed
US-8003296-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-23 US disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-20110008727-A1 Low Activation Energy Photoresist Composition and Process for Its Use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-13 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-7476492-B2 Low activation energy photoresist composition and process for its use INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2009-01-13 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed
US-20070275324-A1 Low activation energy photoresist composition and process for its use GLOBALFOUNDRIES U.S. INC. 2007-11-29 US disclosed
US-7205090-B2 Chemical amplification type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-04-17 US disclosed