Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 17/20 | 0.38 |
| ▸ | HSD11B2 | P80365 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL686563 | 0.86 | HSD11B1 (0.34) | HSD11B1 | |
| SCHEMBL13225201 | 0.84 | HSD11B1 (0.32) | HSD11B1ALDH1A1L3MBTL1 | |
| SCHEMBL13467027 | 0.83 | HSD11B1 (0.37) | HSD11B1HSD11B2ALDH1A1L3MBTL1 | |
| SCHEMBL24413715 | 0.83 | HSD11B1 (0.37) | HSD11B1HSD11B2ALDH1A1L3MBTL1 | |
| SCHEMBL24409155 | 0.83 | HSD11B1 (0.33) | HSD11B1HSD11B2 | |
| SCHEMBL14331430 | 0.82 | HSD11B1 (0.41) | HSD11B1HSD11B2 | |
| SCHEMBL13225200 | 0.82 | SCN9A (0.40) | HSD11B1 | |
| SCHEMBL24116046 | 0.82 | — | — | |
| SCHEMBL107298 | 0.82 | HSD11B1 (0.40) | HSD11B1ALDH1A1L3MBTL1 | |
| SCHEMBL13225202 | 0.81 | HSD11B1 (0.42) | HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 47 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8298746-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-10-30 | — | — | US | disclosed |
| US-8232039-B2 | Polymer and resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-07-31 | — | — | US | disclosed |
| US-8173352-B2 | Resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8158329-B2 | Compound and chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-17 | — | — | US | disclosed |
| US-8062830-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8062829-B2 | Chemically amplified resist composition and chemically amplified resist composition for immersion lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-22 | — | — | US | disclosed |
| US-8057983-B2 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-15 | — | — | US | disclosed |
| US-8048612-B2 | Polymer and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-11-01 | — | — | US | disclosed |
| US-8003296-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-23 | — | — | US | disclosed |
| US-7998656-B2 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080248423-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |