⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19561616 | 1.00 | — | — | |
| SCHEMBL12332044 | 0.89 | — | — | |
| SCHEMBL19561618 | 0.88 | — | — | |
| SCHEMBL18888086 | 0.87 | — | — | |
| SCHEMBL14838913 | 0.87 | — | — | |
| SCHEMBL12555698 | 0.86 | — | — | |
| SCHEMBL74936 | 0.86 | — | — | |
| SCHEMBL22402830 | 0.86 | — | — | |
| SCHEMBL13425047 | 0.86 | — | — | |
| SCHEMBL15216853 | 0.86 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11249395-B2 | Pattern forming method, method for manufacturing electronic device, laminate film, and composition for forming upper layer film | FUJIFILM CORPORATION (JP) | 2022-02-15 | — | — | US | disclosed |
| EP-2414896-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2020-11-11 | — | — | EP | disclosed |
| EP-2756353-B1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-9897916-B2 | Compound, polymer compound, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170322490-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT | FUJIFILM CORPORATION (JP) | 2017-11-09 | — | — | US | disclosed |
| EP-2356516-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORP (JP) | 2017-10-25 | — | — | EP | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9709892-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-18 | — | — | US | disclosed |
| WO-2010029982-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR株式会社 (JP) | 2010-03-18 | — | — | WO | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20090198065-A1 | RESIST POLYMER, RESIST COMPOSITION, PROCESS FOR PATTERN FORMATION, AND STARTING COMPOUNDS FOR PRODUCTION OF THE RESIST POLYMER | MITSUBISHI RAYON CO., LTD. (JP) | 2009-08-06 | — | — | US | disclosed |
| US-20080051536-A1 | Method for Producing (Co) Polymer Having Carboxyl Group | JSR CORPORATION (JP) | 2008-02-28 | — | — | US | disclosed |
| US-20080032241-A1 | Resist Polymer, Process For Production Thereof, Resist Composition, And Process For Production Of Substrated With Patterns Thereon | MITSUBISHI RAYON CO., LTD. (JP) | 2008-02-07 | — | — | US | disclosed |
| US-20070254247-A1 | Radiation-sensitive resin composition | YAMAMOTO MASAFUMI | 2007-11-01 | — | — | US | disclosed |
| US-20070254247-A1 | Radiation-sensitive resin composition | YAMAMOTO MASAFUMI | 2007-11-01 | — | — | US | disclosed |
| US-20070190449-A1 | Resist polymer, resist composition, process for pattern formation, and starting compounds for production of the resist polymer | MITSUBISHI RAYON CO., LTD. (JP) | 2007-08-16 | — | — | US | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |