⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12555698 | 1.00 | — | — | |
| SCHEMBL22402830 | 1.00 | — | — | |
| SCHEMBL12405464 | 1.00 | — | — | |
| SCHEMBL13425047 | 1.00 | — | — | |
| SCHEMBL4403858 | 0.91 | — | — | |
| SCHEMBL17247232 | 0.90 | — | — | |
| SCHEMBL21009469 | 0.88 | — | — | |
| SCHEMBL19561616 | 0.86 | — | — | |
| SCHEMBL441782 | 0.86 | — | — | |
| SCHEMBL12427194 | 0.86 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 588 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12032290-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device | FUJIFILM CORPORATION (JP) | 2024-07-09 | — | — | US | disclosed |
| WO-2024127808-A1 | RADIATION-SENSITIVE COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | JSR株式会社 | 2024-06-20 | — | — | WO | disclosed |
| US-20240027908-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2024-01-25 | — | — | US | disclosed |
| WO-2024005049-A1 | COMPOSITION, RESIN COMPOSITION, FILM FORMATION COMPOSITION, PATTERN FORMATION METHOD, AND COMPOUND | 三菱瓦斯化学株式会社 | 2024-01-04 | — | — | WO | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400765-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING PATTERN, AND ONIUM SALT COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230400769-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7255973-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-14 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070111140-A1 | Resist composition and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-20070072115-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-29 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189493-B2 | Polymer, positive resist composition, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |