SCHEMBL442637

SCHEMBL442637

O=P(O)(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.52

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
PGK1 P00558 4/20 0.52
PGK2 P07205 4/20 0.52
THRB P10828 1/20 0.36
CA1 P00915 2/20 0.32
CA2 P00918 2/20 0.32
MMP1 P03956 2/20 0.32
MMP2 P08253 2/20 0.32
MMP9 P14780 2/20 0.32
MMP8 P22894 2/20 0.32
MMP13 P45452 2/20 0.32
PTPN1 P18031 1/20 0.32
LMNA P02545 2/20 0.30
KDM4E B2RXH2 1/20 0.30
TSHR P16473 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL20558504 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL20558582 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL2944720 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL2681324 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL2783614 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL234703 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
SCHEMBL11859908 0.97 PGK1 (0.50) PGK1PGK2THRBCA1CA2
Ammonia Solution, Strong SCHEMBL23493197 0.95 PGK1 (0.48) PGK1PGK2THRBCA1CA2
Ammonia Solution, Strong SCHEMBL1409101 0.95 PGK1 (0.48) PGK1PGK2THRBCA1CA2
Ammonia Solution, Strong SCHEMBL1408862 0.95 PGK1 (0.48) PGK1PGK2THRBCA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 84 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108369907-B Liquid composition and method for surface treatment of semiconductor substrate using same 三菱瓦斯化学株式会社 2022-09-20 CN claimed
US-11094526-B2 Liquid composition for imparting alcohol-repellency to semiconductor substrate material, and method for treating surface of semiconductor substrate using said liquid composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-08-17 US claimed
US-10745620-B2 Reactive mesogen formulation with conductive additive MERCK PATENT GMBH (DE) 2020-08-18 US claimed
EP-3404700-B1 LIQUID COMPOSITION FOR IMPARTING ALCOHOL-REPELLENCY TO SEMICONDUCTOR SUBSTRATE MATERIAL, AND METHOD FOR TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAID LIQUID COMPOSITION MITSUBISHI GAS CHEMICAL CO (JP) 2020-05-13 EP claimed
US-20190019672-A1 LIQUID COMPOSITION FOR IMPARTING ALCOHOL-REPELLENCY TO SEMICONDUCTOR SUBSTRATE MATERIAL, AND METHOD FOR TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAID LIQUID COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2019-01-17 US claimed
EP-3404700-A1 LIQUID COMPOSITION FOR IMPARTING ALCOHOL-REPELLENCY TO SEMICONDUCTOR SUBSTRATE MATERIAL, AND METHOD FOR TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE USING SAID LIQUID COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2018-11-21 EP claimed
US-20170283699-A1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2017-10-05 US claimed
EP-2812413-B1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2016-03-16 EP claimed
US-20150008373-A1 REACTIVE MESOGEN FORMULATION WITH CONDUCTIVE ADDITIVE MERCK PATENT GMBH (DE) 2015-01-08 US claimed
EP-0663378-B1 Process for preparing of 2,2'-dimethyl-1, 1'-binaphthalene and 2,7'-Dimethyl-1,1'binaphthalene HOECHST AG (DE) 1999-03-31 EP claimed
US-5767333-A ELECTROCHEMICAL OXIDATIVE DIMERIZATION OF 2-METHYLNAPHTHALENE HOECHST AG (DE) 1998-06-16 US claimed
EP-0675093-B1 Process for preparing 4,4'-dimethyl-1,1'-binaphthyl HOECHST AG (DE) 1998-06-10 EP claimed
US-5522982-A Process for preparing 4,4'-dimethyl-1,1'-binaphthyl HOECHST AKTIENGESELLSCHAFT (DE) 1996-06-04 US claimed
EP-0675093-A1 Process for preparing 4,4'-dimethyl-1,1'-binaphthyl HOECHST AKTIENGESELLSCHAFT (DE) 1995-10-04 EP claimed
EP-0663378-A1 2,7'-Dimethyl-1,1'-bioaphthalene and process for preparing of 2,2'-dimethyl-1,1'-binaphthalene and 2,7'-Dimethyl-1,1'binaphthalene HOECHST AKTIENGESELLSCHAFT (DE) 1995-07-19 EP claimed
CN-109559980-B Method of manufacturing integrated circuit device 三星电子株式会社 2024-02-23 CN disclosed
CN-108369907-B Liquid composition and method for surface treatment of semiconductor substrate using same 三菱瓦斯化学株式会社 2022-09-20 CN disclosed
US-5522982-A Process for preparing 4,4'-dimethyl-1,1'-binaphthyl HOECHST AKTIENGESELLSCHAFT (DE) 1996-06-04 US disclosed
EP-0675093-A1 Process for preparing 4,4'-dimethyl-1,1'-binaphthyl HOECHST AKTIENGESELLSCHAFT (DE) 1995-10-04 EP disclosed
EP-0663378-A1 2,7'-Dimethyl-1,1'-bioaphthalene and process for preparing of 2,2'-dimethyl-1,1'-binaphthalene and 2,7'-Dimethyl-1,1'binaphthalene HOECHST AKTIENGESELLSCHAFT (DE) 1995-07-19 EP disclosed