SCHEMBL443350

SCHEMBL443350

c1ccc2cc3c(-c4ccc5ccc6cccc7ccc4c5c67)cccc3cc2c1

nearest known ligand 0.60

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP1A2 P05177 4/20 0.60
ERBB2 P04626 1/20 0.60
FYN P06241 1/20 0.60
MAOA P21397 1/20 0.60
ACHE P22303 1/20 0.60
AHR P35869 1/20 0.60
ALDH1A1 P00352 10/20 0.47
HSD17B10 Q99714 8/20 0.47
HPGD P15428 7/20 0.47
TSHR P16473 5/20 0.47
MAPK1 P28482 3/20 0.47
HIF1A Q16665 3/20 0.47
CASP1 P29466 2/20 0.47
TP53 P04637 1/20 0.47
CASP7 P55210 1/20 0.47
THRB P10828 1/20 0.45
L3MBTL1 Q9Y468 4/20 0.44
CYP3A4 P08684 2/20 0.44
TDP1 Q9NUW8 2/20 0.44
CYP1B1 Q16678 2/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28715074 0.95 CYP1A2 (0.55) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL21708810 0.93 CYP1A2 (0.56) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL27567812 0.91 CYP1A2 (0.55) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL28476963 0.91 CYP1A2 (0.53) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL5334139 0.86 ALDH1A1 (0.56) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL30075940 0.84 ALDH1A1 (0.56) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL14322660 0.84 ALDH1A1 (0.56) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL27927260 0.84 CYP1A2 (0.55) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL2956150 0.83 ALDH1A1 (0.64) CYP1A2ERBB2FYNMAOAACHE
SCHEMBL29354014 0.83 ALDH1A1 (0.50) CYP1A2ERBB2FYNMAOAACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US claimed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US claimed
US-20110136282-A1 METHOD FOR PRODUCING DEVICE TORAY INDUSTRIES, INC. (JP) 2011-06-09 US claimed
EP-2309823-A1 METHOD FOR PRODUCING DEVICE Toray Industries, Inc. (JP) 2011-04-13 EP claimed
US-9045587-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-20140363768-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US disclosed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US disclosed
CN-102113413-A Method for producing device 2011-06-29 CN disclosed
US-20110136282-A1 METHOD FOR PRODUCING DEVICE TORAY INDUSTRIES, INC. (JP) 2011-06-09 US disclosed
EP-2309823-A1 METHOD FOR PRODUCING DEVICE Toray Industries, Inc. (JP) 2011-04-13 EP disclosed