SCHEMBL444758

SCHEMBL444758

FC(F)(F)F.FC(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14721708 1.00
SCHEMBL24604 1.00
Water SCHEMBL2687435 0.89
SCHEMBL2043839 0.89
Hydrochloric Acid SCHEMBL10488807 0.89
SCHEMBL2044940 0.89
Ammonia Solution, Strong SCHEMBL9317182 0.89
SCHEMBL3133499 0.89
Helium SCHEMBL7068545 0.89
SCHEMBL729481 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20120065896-A1 BIOLOGICAL AND CHEMICAL TEST MEDIA AND SYSTEM SELINFREUND RICHARD H (US) 2012-03-15 US claimed
US-5922622-A Pattern formation of silicon nitride VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) 1999-07-13 US claimed
US-5872061-A Plasma etch method for forming residue free fluorine containing plasma etched layers TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 1999-02-16 US claimed
WO-2022114928-A1 BATTERY, AND ELECTRONIC DEVICE INCLUDING SAME 삼성전자 주식회사 2022-06-02 WO disclosed
CN-209537348-U Using the device of rectifying and adsorption combined mode high purity tetrafluoromethane 天津市泰源工业气体有限公司 2019-10-25 CN disclosed
CN-109955567-A Waterproofness transparent membrane, the manufacturing method of waterproofness transparent membrane, display and pH effect film 株式会社神户制钢所 2019-07-02 CN disclosed
US-20120065896-A1 BIOLOGICAL AND CHEMICAL TEST MEDIA AND SYSTEM SELINFREUND RICHARD H (US) 2012-03-15 US disclosed
CN-101007757-B Liquid-phase (amm)oxidation process Rohm and Haas Co. (US) Independence Mall West, Philadelphia, Pennsylvania. U.S.A (US) 2012-02-08 CN disclosed
CN-102150032-A Diagnostic system with portable collection housing SONY DADC 2011-08-10 CN disclosed
US-20110180313-A1 METHOD OF FORMING CIRCUIT INTERCONNECTION, CIRCUIT BOARD, AND CIRCUIT INTERCONNECTION FILM HAVING FILM THICKNESS LARGER THAN WIDTH THEREOF SEIKO EPSON CORPORATION (JP) 2011-07-28 US disclosed
US-20110174528-A1 METHOD OF FORMING CIRCUIT INTERCONNECTION, CIRCUIT BOARD, AND CIRCUIT INTERCONNECTION FILM HAVING FILM THICKNESS LARGER THAN WIDTH THEREOF SEIKO EPSON CORPORATION (JP) 2011-07-21 US disclosed
US-6008137-A Pattern formation of silicon nitride VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) 1999-12-28 US disclosed
US-5942446-A SUBSTRATE HAVING SILICON CONTAINING DIELECTRIC LAYER AND HARD MASK LAYER IS PARTIALLY PLASMA ETCHED BY ETCHANT GAS COMPRISING FLUOROCARBON GAS, FORMING FLUOROCARBON POLYMER HARD MASK LAYER; FURTHER PLASMA ETCHING WITH FLUORO ETCHANT GAS TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 1999-08-24 US disclosed
US-5938422-A Removal of noxious substances from gas streams THE BOC GROUP PLC (GB) 1999-08-17 US disclosed
US-5922622-A Pattern formation of silicon nitride VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION (TW) 1999-07-13 US disclosed
US-5872061-A Plasma etch method for forming residue free fluorine containing plasma etched layers TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 1999-02-16 US disclosed
EP-0802370-A2 Removal of noxious substances from gas streams The BOC Group plc (GB) 1997-10-22 EP disclosed
CN-1161952-A Method for production of perfluorocarbon SHOWA DENKO KK (JP) 1997-10-15 CN disclosed
US-5587110-A CARBON FLUORIDE PARTICLES DAIKIN INDUSTRIES, LTD. (JP) 1996-12-24 US disclosed
US-4028155-A \"COLD\" PLASMA OF OXYGEN, A HALOGEN COMPOUND, AND A NOBLE GAS CARRIER LFE CORPORATION (US) 1977-06-07 US disclosed