⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12898459 | 0.80 | — | — | |
| SCHEMBL10308294 | 0.79 | — | — | |
| SCHEMBL2773214 | 0.79 | — | — | |
| SCHEMBL17239296 | 0.73 | — | — | |
| SCHEMBL2769579 | 0.73 | — | — | |
| SCHEMBL12898516 | 0.73 | — | — | |
| Water SCHEMBL28106022 | 0.71 | — | — | |
| Ammonia Solution, Strong SCHEMBL28118142 | 0.71 | — | — | |
| SCHEMBL35695 | 0.69 | — | — | |
| SCHEMBL124698 | 0.69 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-9061317-B2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-06-23 | — | — | US | disclosed |
| US-8951342-B2 | Methods for using porogens for low k porous organosilica glass films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-02-10 | — | — | US | disclosed |
| US-20130095255-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-04-18 | — | — | US | disclosed |
| US-20120282415-A1 | Methods For Using Porogens For Low K Porous Organosilica Glass Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2012-11-08 | — | — | US | disclosed |
| US-20120178253-A1 | Method of Manufacturing a Semiconductor Device Having a Porous, Low-K Dielectric Layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-12 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| EP-2116632-A2 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | Air Products and Chemicals, Inc. (US) | 2009-11-11 | — | — | EP | disclosed |
| US-20080268177-A1 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2008-10-30 | — | — | US | disclosed |