⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12898482 | 0.88 | — | — | |
| SCHEMBL12898516 | 0.87 | — | — | |
| SCHEMBL2769579 | 0.87 | — | — | |
| Water SCHEMBL28106022 | 0.84 | — | — | |
| Ammonia Solution, Strong SCHEMBL28118142 | 0.84 | — | — | |
| SCHEMBL16668432 | 0.82 | — | — | |
| SCHEMBL3482487 | 0.82 | — | — | |
| SCHEMBL4459238 | 0.79 | — | — | |
| SCHEMBL2773214 | 0.79 | — | — | |
| SCHEMBL6442374 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-9224593-B2 | Method of manufacturing a semiconductor device having a porous, low-k dielectric layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-12-29 | — | — | US | disclosed |
| US-20120178253-A1 | Method of Manufacturing a Semiconductor Device Having a Porous, Low-K Dielectric Layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-07-12 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-20100261925-A1 | METHOD FOR PRODUCING SILICON COMPOUND | JSR CORPORATION (JP) | 2010-10-14 | — | — | US | disclosed |
| CN-1536023-A | Porous membrane shaping composition, preparation method of porous membrane, porous membrane intercalation insulating film and semiconductor device | ��Խ��ѧ��ҵ��ʽ���� | 2004-10-13 | — | — | CN | disclosed |