⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2012862 | 0.86 | — | — | |
| SCHEMBL2883290 | 0.86 | — | — | |
| Methane SCHEMBL15709419 | 0.80 | — | — | |
| SCHEMBL8404066 | 0.57 | — | — | |
| SCHEMBL9705842 | 0.57 | — | — | |
| SCHEMBL16175 | 0.57 | — | — | |
| SCHEMBL10799457 | 0.57 | — | — | |
| SCHEMBL9219479 | 0.57 | — | — | |
| Charcoal, Activated SCHEMBL9844168 | 0.51 | — | — | |
| Ammonia Solution, Strong SCHEMBL218244 | 0.51 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8928083-B2 | Diode structure and method for FINFET technologies | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-01-06 | — | — | US | claimed |
| US-20140217508-A1 | Diode Structure and Method for FINFET Technologies | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-08-07 | — | — | US | claimed |
| US-20070105262-A1 | Method for fabricating an integrated circuit with a CMOS manufacturing process | INFINEON TECHNOLOGIES AG (DE) | 2007-05-10 | — | — | US | claimed |
| US-6294668-B1 | ANTIBACTERIAL ACTIVITY AGAINST BETA-LACTAM SENSITIVE AND RESISTANT GRAM-POSITIVE BACTERIA, SUCH AS STAPHYLOCOCCI, PNEUMOCOCCI, AND ENTEROCOCCI; USED IN THERAPY OF INFECTIOUS DISEASES CAUSED BY THOSE BACTERIA | HOFFMAN-LA ROCHE INC. | 2001-09-25 | — | — | US | claimed |
| US-20230422535-A1 | IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME | PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. (JP) | 2023-12-28 | — | — | US | disclosed |
| CN-102956453-B | Semiconductor device and method for fabricating the same | 联华电子股份有限公司 | 2017-02-22 | — | — | CN | disclosed |
| CN-105826174-A | Semiconductor device and method for fabricating the same | 联华电子股份有限公司 | 2016-08-03 | — | — | CN | disclosed |
| CN-102891085-B | Semiconductor element with metal grid and manufacturing method thereof | 联华电子股份有限公司 | 2016-08-03 | — | — | CN | disclosed |
| CN-105810585-A | Method for manufacturing semiconductor structure | 联华电子股份有限公司 | 2016-07-27 | — | — | CN | disclosed |
| CN-105633152-A | Semiconductor structure and manufacturing method thereof | UNITED MICROELECTRONICS CORP | 2016-06-01 | — | — | CN | disclosed |
| CN-102856255-B | Semiconductor element with metal grid and manufacturing method thereof | UNITED MICROELECTRONICS CORP. (CN) | 2016-05-25 | — | — | CN | disclosed |
| CN-102738083-B | Method for manufacturing semiconductor element with metal gate | UNITED MICROELECTRONICS CORP. (CN) | 2016-05-25 | — | — | CN | disclosed |
| US-20060263961-A1 | Method for Forming Dual Fully Silicided Gates and Devices with Dual Fully Silicided Gates | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) (BE) | 2006-11-23 | — | — | US | disclosed |
| EP-1724828-A2 | Method for forming dual fully silicided gates and devices obtained thereby | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC) (BE) | 2006-11-22 | — | — | EP | disclosed |
| US-7098516-B2 | Refractory metal-based electrodes for work function setting in semiconductor devices | TEXAS INSTRUMENTS INCORPORATED (US) | 2006-08-29 | — | — | US | disclosed |
| CN-1811478-A | Method for estimating service life of gold insulated half field effect transistor with high dielectric grid dielectric layer | TAIWAN SEMICONDUCTOR MFG (CN) | 2006-08-02 | — | — | CN | disclosed |
| CN-1725507-A | Semiconductor device and method for manufacturing the same | TAIWAN INTEGRATED CIRCUIT MFG (CN) | 2006-01-25 | — | — | CN | disclosed |
| US-20050258500-A1 | Refractory metal-based electrodes for work function setting in semiconductor devices | TEXAS INSTRUMENTS, INCORPORATED (US) | 2005-11-24 | — | — | US | disclosed |
| CN-1643673-A | Metal organic chemical vapor deposition and atomic layer deposition | AVIZA TECH INC (US) | 2005-07-20 | — | — | CN | disclosed |
| CN-1624865-A | Method of controlling critical dimension microloading of photoresist trimming process by polymer deposition | APPLIED MATERIALS INC (US) | 2005-06-08 | — | — | CN | disclosed |