Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 2/20 | 0.45 |
| ▸ | MEN1 | O00255 | 1/20 | 0.45 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 5/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.34 |
| ▸ | MMP1 | P03956 | 1/20 | 0.32 |
| ▸ | MMP2 | P08253 | 1/20 | 0.32 |
| ▸ | MMP3 | P08254 | 1/20 | 0.32 |
| ▸ | MMP8 | P22894 | 1/20 | 0.32 |
| ▸ | MAOA | P21397 | 3/20 | 0.32 |
| ▸ | ACHE | P22303 | 2/20 | 0.30 |
| ▸ | TSHR | P16473 | 2/20 | 0.30 |
| ▸ | BCHE | P06276 | 1/20 | 0.30 |
| ▸ | PHGDH | O43175 | 1/20 | 0.30 |
| ▸ | PLIN1 | O60240 | 1/20 | 0.30 |
| ▸ | GMNN | O75496 | 1/20 | 0.30 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4515826 | 0.78 | KMT2A (0.45) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL5888694 | 0.77 | MEN1 (0.44) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL5327501 | 0.75 | KMT2A (0.50) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL9847817 | 0.73 | KMT2A (0.48) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL9325541 | 0.71 | KMT2A (0.47) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL2777832 | 0.68 | MEN1 (0.52) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA | |
| SCHEMBL514695 | 0.66 | — | — | |
| SCHEMBL8985020 | 0.64 | — | — | |
| SCHEMBL17040541 | 0.64 | — | — | |
| SCHEMBL16965411 | 0.64 | MEN1 (0.48) | KMT2AMEN1HSD17B10SMN1; SMN2LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3240047-B1 | PHOTOSENSITIVE COMPOSITION COMPRISING SEMICONDUCTOR NANOCRYSTALS AND METHOD FOR FORMING SEMICONDUCTOR NANOCRYSTAL PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO LTD (KR) | 2022-07-06 | — | — | EP | disclosed |
| EP-3240047-A1 | PHOTOSENSITIVE SEMICONDUCTOR NANOCRYSTALS, PHOTOSENSITIVE COMPOSITION COMPRISING SEMICONDUCTOR NANOCRYSTALS AND METHOD FOR FORMING SEMICONDUCTOR NANOCRYSTAL PATTERN USING THE SAME | Samsung Electronics Co., Ltd. (KR) | 2017-11-01 | — | — | EP | disclosed |
| EP-1526584-B1 | Method of forming electroluminescent semiconducting nanocrystal patterned layer for an organic-inorganic hybrid electroluminescent devices, and organic-inorganic hybrid electroluminescent device using the same. | SAMSUNG ELECTRONICS CO LTD (KR) | 2017-06-14 | — | — | EP | disclosed |
| US-8911883-B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-12-16 | — | — | US | disclosed |
| US-8758864-B2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-06-24 | — | — | US | disclosed |
| US-20130011635-A1 | PHOTOSENSITIVE SEMICONDUCTOR NANOCRYSTALS, PHOTOSENSITIVE COMPOSITION COMPRISING SEMICONDUCTOR NANOCRYSTALS AND METHOD FOR FORMING SEMICONDUCTOR NANOCRYSTAL PATTERN USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-01-10 | — | — | US | disclosed |
| CN-101200633-B | Method for preparing quantum dot silicic acid film for light-emitting device | SAMSUNG ELECTRONICS CO LTD | 2012-05-23 | — | — | CN | disclosed |
| US-20090073349-A1 | THREE-DIMENSIONAL MICROFABRICATION METHOD USING PHOTOSENSITIVE NANOCRYSTALS AND DISPLAY DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-19 | — | — | US | disclosed |
| US-20090039764-A1 | Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-02-12 | — | — | US | disclosed |
| US-7476487-B2 | Inorganic nanocrystals surface-coordinated with a compound containing a photosensitive carbon to carbon double bond functional group is used for photolithographic process to form a pattern; curable with a curing agents; photomasking; simple method; organic-inorganic hybrid electroluminescent devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-01-13 | — | — | US | disclosed |
| CN-101200633-A | Method for producing quantum dot silicate thin film for light emitting device | SAMSUNG ELECTRONICS CO LTD (KR) | 2008-06-18 | — | — | CN | disclosed |
| EP-1859489-A1 | QUANTUM DOT LIGHT -EMITTING DIODE COMPRISING INORGANIC ELECTRON TRANSPORT LAYER | Samsung Electronics Co., Ltd. (KR) | 2007-11-28 | — | — | EP | disclosed |
| US-7199393-B2 | Photolithographic process to form a pattern, using an inorganic nanocrystals surface-coordinated with a compound containing a photosensitive carbon to carbon double bond functional group; photomasking; simple method; organic-inorganic hybrid electroluminescent devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-04-03 | — | — | US | disclosed |
| WO-2006098540-A1 | QUANTUM DOT LIGHT -EMITTING DIODE COMPRISING INORGANIC ELECTRON TRANSPORT LAYER | SAMSUNG ELECTRONICS CO., LTD (KR) | 2006-09-21 | — | — | WO | disclosed |
| US-20060199039-A1 | Inorganic nanocrystals surface-coordinated with a compound containing a photosensitive carbon to carbon double bond functional group is used for photolithographic process to form a pattern; curable with a curing agents; photomasking; simple method; organic-inorganic hybrid electroluminescent devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-09-07 | — | — | US | disclosed |
| US-20050161666-A1 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-07-28 | — | — | US | disclosed |
| EP-1526584-A2 | Photosensitive semiconductor nanocrystals, photosensitive composition comprising semiconductor nanocrystals and method for forming semiconductor nanocrystal pattern using the same | Samsung Electronics Co., Ltd (KR) | 2005-04-27 | — | — | EP | disclosed |
| US-6869864-B2 | Method for producing quantum dot silicate thin film for light emitting device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-03-22 | — | — | US | disclosed |
| CN-1577906-A | Method for preparing quantum dot silicic acid film for light-emitting device | SAMSUNG ELECTRONICS CO LTD (KR) | 2005-02-09 | — | — | CN | disclosed |
| US-20040266148-A1 | METHOD FOR PRODUCING QUANTUM DOT SILICATE THIN FILM FOR LIGHT EMITTING DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-12-30 | — | — | US | disclosed |