SCHEMBL4515826

SCHEMBL4515826

CCN(CC)C(=O)OSS[Zn]

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.45
MEN1 O00255 1/20 0.45
HSD17B10 Q99714 3/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
LMNA P02545 5/20 0.34
L3MBTL1 Q9Y468 2/20 0.34
MMP1 P03956 1/20 0.32
MMP2 P08253 1/20 0.32
MMP3 P08254 1/20 0.32
MMP8 P22894 1/20 0.32
MAOA P21397 3/20 0.32
ACHE P22303 2/20 0.30
TSHR P16473 2/20 0.30
BCHE P06276 1/20 0.30
PHGDH O43175 1/20 0.30
PLIN1 O60240 1/20 0.30
GMNN O75496 1/20 0.30
TRPA1 O75762 1/20 0.30
ABCB11 O95342 1/20 0.30
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4498446 0.78 KMT2A (0.45) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL5888694 0.77 MEN1 (0.44) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL5327501 0.75 KMT2A (0.50) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL9847817 0.73 KMT2A (0.48) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL9325541 0.71 KMT2A (0.47) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL2777832 0.68 MEN1 (0.52) KMT2AMEN1HSD17B10SMN1; SMN2LMNA
SCHEMBL514695 0.66
SCHEMBL8985020 0.64
SCHEMBL17040541 0.64
SCHEMBL514694 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20090039764-A1 Quantum Dot Light-Emitting Diode Comprising Inorganic Electron Transport Layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-02-12 US disclosed
EP-1859489-A1 QUANTUM DOT LIGHT -EMITTING DIODE COMPRISING INORGANIC ELECTRON TRANSPORT LAYER Samsung Electronics Co., Ltd. (KR) 2007-11-28 EP disclosed
WO-2006098540-A1 QUANTUM DOT LIGHT -EMITTING DIODE COMPRISING INORGANIC ELECTRON TRANSPORT LAYER SAMSUNG ELECTRONICS CO., LTD (KR) 2006-09-21 WO disclosed
US-6869864-B2 Method for producing quantum dot silicate thin film for light emitting device SAMSUNG ELECTRONICS CO., LTD. (KR) 2005-03-22 US disclosed
US-20040266148-A1 METHOD FOR PRODUCING QUANTUM DOT SILICATE THIN FILM FOR LIGHT EMITTING DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-12-30 US disclosed