Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NR4A1 | P22736 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 4/20 | 0.38 |
| ▸ | ERBB2 | P04626 | 1/20 | 0.38 |
| ▸ | FYN | P06241 | 1/20 | 0.38 |
| ▸ | MAOA | P21397 | 1/20 | 0.38 |
| ▸ | ACHE | P22303 | 1/20 | 0.38 |
| ▸ | AHR | P35869 | 1/20 | 0.38 |
| ▸ | DUSP5 | Q16690 | 1/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.36 |
| ▸ | HPGD | P15428 | 5/20 | 0.36 |
| ▸ | HSD17B10 | Q99714 | 4/20 | 0.36 |
| ▸ | THRB | P10828 | 2/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | TSHR | P16473 | 2/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.36 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | APP | P05067 | 1/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2898295 | 0.92 | NR4A1 (0.40) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL3205020 | 0.92 | ALDH1A1 (0.37) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL29754167 | 0.90 | NR1I2 (0.37) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL2904056 | 0.90 | NR4A1 (0.33) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL453181 | 0.90 | NR1I2 (0.37) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL3202140 | 0.89 | NR4A1 (0.33) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL3195405 | 0.89 | TDP1 (0.39) | NR4A1ALDH1A1TDP1L3MBTL1KDM4E | |
| SCHEMBL3199446 | 0.89 | NR4A1 (0.33) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL38661068 | 0.87 | NR4A1 (0.43) | NR4A1CYP1A2ERBB2FYNMAOA | |
| SCHEMBL2900933 | 0.87 | PPARG (0.32) | NR4A1ALDH1A1HPGDHSD17B10CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 155 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11970557-B2 | Polymer containing photoacid generator | LG CHEM, LTD. (KR) | 2024-04-30 | — | — | US | disclosed |
| EP-3010943-B1 | CURABLE COMPOSITION, FILM, AND METHOD OF PRODUCING FILM | CANON KK (JP) | 2024-04-03 | — | — | EP | disclosed |
| US-11681227-B2 | Enhanced EUV photoresist materials, formulations and processes | IRRESISTIBLE MATERIALS LTD (GB) | 2023-06-20 | — | — | US | disclosed |
| US-11592605-B2 | Color developing structure having concave-convex layer, method for producing such structure, and display | TOPPAN PRINTING CO., LTD. (JP) | 2023-02-28 | — | — | US | disclosed |
| CN-114975098-A | Nanoimprint liquid material, method for producing pattern of cured product, and method for producing circuit board | 佳能株式会社 | 2022-08-30 | — | — | CN | disclosed |
| CN-107251193-B | Nanoimprint liquid material, method for producing pattern of cured product, method for producing optical component, and method for producing circuit board | 佳能株式会社 | 2022-06-21 | — | — | CN | disclosed |
| CN-111699206-B | Polymers comprising photoacid generators | 株式会社LG化学 | 2022-05-10 | — | — | CN | disclosed |
| CN-113994256-A | Method for forming EUV patterned resist | 亚历克斯·P·G·罗宾逊 | 2022-01-28 | — | — | CN | disclosed |
| US-20210102021-A1 | POLYMER CONTAINING PHOTOACID GENERATOR | LG CHEM, LTD. (KR) | 2021-04-08 | — | — | US | disclosed |
| CN-111699206-A | Polymers comprising photoacid generators | 株式会社LG化学 | 2020-09-22 | — | — | CN | disclosed |
| EP-1164433-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-12-19 | — | — | EP | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010023050-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-09-20 | — | — | US | disclosed |
| EP-1122605-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6136500-A | CONTAINS A PHOTOACID GENERATOR COMPRISING A COMBINATION OF A COMPOUND THAT GENERATES A CARBOXYLIC ACID UPON EXPOSURE TO RADIATION AND ANOTHER COMPOUND THAT GENERATES ANOTHER ACID UPON EXPOSURE TO RADIATION | JSR CORPORATION (JP) | 2000-10-24 | — | — | US | disclosed |
| EP-1035436-A1 | Resist pattern formation method | JSR Corporation (JP) | 2000-09-13 | — | — | EP | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |
| EP-0898201-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-02-24 | — | — | EP | disclosed |