SCHEMBL451028

SCHEMBL451028

CC1=C([Ti](N(C)C)(N(C)C)N(C)C)CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9310514 0.82
SCHEMBL16819035 0.79
SCHEMBL7752000 0.73
SCHEMBL5888526 0.73
SCHEMBL12004927 0.72
SCHEMBL5074142 0.71
SCHEMBL8090434 0.71
SCHEMBL1309581 0.68
SCHEMBL8090475 0.67
SCHEMBL9134638 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9536940-B2 Interfacial materials for use in semiconductor structures and related methods MICRON TECHNOLOGY, INC. (US) 2017-01-03 US claimed
US-20140161706-A1 METHOD AND APPARATUS OF FORMING METAL COMPOUND FILM, AND ELECTRONIC PRODUCT TOKYO ELECTRON LIMITED (JP) 2014-06-12 US claimed
US-8735304-B2 Film forming method, film forming apparatus, and storage medium ELPIDA MEMORY INC. (JP) 2014-05-27 US claimed
US-8642127-B2 Method of forming titanium nitride film TOKYO ELECTRON LIMITED (JP) 2014-02-04 US claimed
US-8288241-B2 Semiconductor device, method of manufacturing the same and adsorption site blocking atomic layer deposition method ELPIDA MEMORY, INC. (JP) 2012-10-16 US claimed
US-20120244721-A1 FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM TOKYO ELECTRON LIMITED (JP) 2012-09-27 US claimed
US-20120219710-A1 METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM TOKYO ELECTRON LIMITED (JP) 2012-08-30 US claimed
US-20120077322-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD TOKYO ELECTRON LIMITED (JP) 2012-03-29 US claimed
EP-3178808-B1 ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, THIN FILM FORMATION METHOD AND ALCOHOL COMPOUND ADEKA CORP (JP) 2024-11-06 EP disclosed
US-20230159561-A1 HETEROCYCLE-SUBSTITUTED BICYCLIC AZOLE PESTICIDES FMC CORP (US) 2023-05-25 US disclosed
US-11618762-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2023-04-04 US disclosed
US-11578085-B2 Heterocycle-substituted bicyclic azole pesticides FMC CORPORATION (US) 2023-02-14 US disclosed
US-20220017554-A1 COMPOUND, RAW MATERIAL FOR FORMING THIN FILM, METHOD FOR MANUFACTURING THIN FILM, AND AMIDINE COMPOUND ADEKA CORPORATION (JP) 2022-01-20 US disclosed
US-11161867-B2 Compound, raw material for forming thin film, method for manufacturing thin film, and amidine compound ADEKA CORPORATION (JP) 2021-11-02 US disclosed
CN-102655085-A Method of forming titanium nitride film, apparatus for forming titanium nitride film, and program TOKYO ELECTRON LTD 2012-09-05 CN disclosed
US-20120219710-A1 METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM TOKYO ELECTRON LIMITED (JP) 2012-08-30 US disclosed
US-20120219710-A1 METHOD OF FORMING TITANIUM NITRIDE FILM, APPARATUS FOR FORMING TITANIUM NITRIDE FILM, AND PROGRAM TOKYO ELECTRON LIMITED (JP) 2012-08-30 US disclosed
US-20120077322-A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND ADSORPTION SITE BLOCKING ATOMIC LAYER DEPOSITION METHOD TOKYO ELECTRON LIMITED (JP) 2012-03-29 US disclosed
US-20120064689-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE ELPIDA MEMORY, INC. (JP) 2012-03-15 US disclosed
US-20120065233-A1 TYROSINE KINASE INHIBITORS GREGOR VLAD EDWARD (US) 2012-03-15 US disclosed