SCHEMBL4524560

SCHEMBL4524560

CCCCCCCCCCCCCCCCOc1ccc(S(=O)(=O)O)cc1

nearest known ligand 0.62

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.62
CA12 O43570 2/20 0.62
CA1 P00915 2/20 0.62
CA2 P00918 2/20 0.62
CA7 P43166 2/20 0.62
CA9 Q16790 2/20 0.62
NR5A1 Q13285 1/20 0.61
TP53 P04637 1/20 0.58
S1PR3 Q99500 1/20 0.57
PLA2G4B P0C869 2/20 0.57
NPC1 O15118 1/20 0.55
RAB9A P51151 1/20 0.55
MAPK1 P28482 1/20 0.55
RECQL P46063 1/20 0.55
L3MBTL1 Q9Y468 1/20 0.55
RARB P10826 3/20 0.54
LTA4H P09960 2/20 0.53
PLA2G4A P47712 1/20 0.51

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4528116 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4539506 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4532493 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4530059 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4529708 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4533770 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4533781 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4527703 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4537643 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4531551 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed