SCHEMBL4537643

SCHEMBL4537643

CCCCCCCCCCCCOc1ccc(S(=O)(=O)O)cc1

nearest known ligand 0.62

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.62
CA12 O43570 2/20 0.62
CA1 P00915 2/20 0.62
CA2 P00918 2/20 0.62
CA7 P43166 2/20 0.62
CA9 Q16790 2/20 0.62
NR5A1 Q13285 1/20 0.61
TP53 P04637 1/20 0.58
S1PR3 Q99500 1/20 0.57
PLA2G4B P0C869 2/20 0.57
NPC1 O15118 1/20 0.55
RAB9A P51151 1/20 0.55
MAPK1 P28482 1/20 0.55
RECQL P46063 1/20 0.55
L3MBTL1 Q9Y468 1/20 0.55
RARB P10826 3/20 0.54
LTA4H P09960 2/20 0.53
PLA2G4A P47712 1/20 0.51

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4528116 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4539506 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4532493 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4530059 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4524560 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4529708 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4533770 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4533781 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4527703 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7
SCHEMBL4531551 1.00 TSHR (0.62) TSHRCA12CA1CA2CA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117904081-A Protease variants and polynucleotides encoding same 诺维信公司 2024-04-19 CN disclosed
CN-117904083-A Protease variants and polynucleotides encoding same 诺维信公司 2024-04-19 CN disclosed
CN-117904084-A Protease variants and polynucleotides encoding same 诺维信公司 2024-04-19 CN disclosed
CN-117165561-A Protease variants and polynucleotides encoding same 诺维信公司 2023-12-05 CN disclosed
CN-114480035-A Detergent composition and use thereof 诺维信公司 2022-05-13 CN disclosed
CN-109312270-B Detergent composition and use thereof 诺维信公司 2022-01-28 CN disclosed
CN-108495921-B Detergent composition and use thereof 诺维信公司 2020-12-15 CN disclosed
CN-108291178-B Detergent compositions comprising amylase and protease variants 诺维信公司 2020-08-04 CN disclosed
US-8187373-B2 Printing inks for offset and/or high printing containing NIR absorbers and NIR absorbers soluble in offset and/or high printing inks BASF SE (DE) 2012-05-29 US disclosed
US-8187373-B2 Printing inks for offset and/or high printing containing NIR absorbers and NIR absorbers soluble in offset and/or high printing inks BASF SE (DE) 2012-05-29 US disclosed
US-7901494-B2 Printing inks for offset and/or high printing containing NIR absorbers and NIR absorbers soluble in offset and/or high printing inks BASF SE (DE) 2011-03-08 US disclosed
US-20100126386-A1 RADIATION-CURABLE COATING SUBSTANCES BASF AKTIENGESELLSCHAFT (DE) 2010-05-27 US disclosed
US-20100126386-A1 RADIATION-CURABLE COATING SUBSTANCES BASF AKTIENGESELLSCHAFT (DE) 2010-05-27 US disclosed
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-7323437-B2 Process for producing a bleaching activator composition KAO CORPORATION (JP) 2008-01-29 US disclosed
US-20070277700-A1 Printing Inks For Offset And/Or High Printing Containing Nir Absorbers And Nir Absorbers Soluble In Offset And/Or High Printing Inks BASF AKTIENGESELLSCHAFT (DE) 2007-12-06 US disclosed
US-20070277700-A1 Printing Inks For Offset And/Or High Printing Containing Nir Absorbers And Nir Absorbers Soluble In Offset And/Or High Printing Inks BASF AKTIENGESELLSCHAFT (DE) 2007-12-06 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed