SCHEMBL4535344

SCHEMBL4535344

CCCCOc1ccc(S(=O)(=O)O)cc1C

nearest known ligand 0.60

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.60
WDR5 P61964 3/20 0.58
ESR1 P03372 3/20 0.49
HTT P42858 3/20 0.47
ALDH1A1 P00352 2/20 0.46
LMNA P02545 2/20 0.46
SMN1; SMN2 Q16637 2/20 0.46
TSHR P16473 3/20 0.45
CA12 O43570 1/20 0.45
CA1 P00915 1/20 0.45
CA2 P00918 1/20 0.45
CA7 P43166 1/20 0.45
CA9 Q16790 1/20 0.45
THRA P10827 1/20 0.44
THRB P10828 1/20 0.44
APEX1 P27695 1/20 0.42
MAPK1 P28482 1/20 0.41
RECQL P46063 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4537332 0.95 S1PR3 (0.67) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4533583 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4532999 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4530113 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4537948 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4536045 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4539139 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4538004 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4522857 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1
SCHEMBL4527901 0.94 S1PR3 (0.69) S1PR3WDR5ESR1HTTALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed