SCHEMBL4541017

SCHEMBL4541017

CCCCCCCCCCCOc1ccc(S(=O)(=O)O)c(C)c1

nearest known ligand 0.61

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
PDIA6 Q15084 1/20 0.61
THRA P10827 3/20 0.51
THRB P10828 3/20 0.51
NR5A1 Q13285 1/20 0.49
TP53 P04637 1/20 0.48
TSHR P16473 1/20 0.48
PLA2G4B P0C869 2/20 0.47
S1PR1 P21453 1/20 0.46
NPC1 O15118 1/20 0.46
RAB9A P51151 1/20 0.46
S1PR3 Q99500 1/20 0.45
PTPN11 Q06124 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4530560 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4539504 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4527237 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4535318 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4530528 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4539263 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4537390 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4537340 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4524593 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53
SCHEMBL4532503 1.00 PDIA6 (0.61) PDIA6THRATHRBNR5A1TP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed