SCHEMBL45685

SCHEMBL45685

CN(C)[Ti](N(C)C)(N(C)C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28034402 1.00
Butane SCHEMBL2058367 0.82
SCHEMBL7592618 0.73
SCHEMBL2924932 0.59
SCHEMBL457555 0.58
Trimethylammonium SCHEMBL284438 0.53
Trimethylammonium SCHEMBL5310222 0.53
Trimethylammonium SCHEMBL5582 0.53
Trimethylammonium SCHEMBL13989274 0.53
Trimethylammonium SCHEMBL1331060 0.53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 6215 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4743602-A1 FORMULATIONS FOR SELECTIVE DEPOSITION Merck Patent GmbH (DE) 2026-05-20 EP claimed
US-20260136855-A1 METHOD OF SELECTIVE DEPOSITION ON SUBSTRATE, SUBSTRATE FABRICATED THEREBY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE COMPRISING SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-14 US claimed
US-12628400-B2 Seam free titanium nitride gapfill APPLIED MATERIALS, INC. (US) 2026-05-12 US claimed
US-12612703-B2 Method for providing a substrate for an electrochemical cell with a catalytic material NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO (NL) 2026-04-28 US claimed
EP-4722411-A1 A SEMICONDUCTOR MANUFACTURING APPARATUS AND A METHOD FOR MANUFACTURING OF A SEMICONDUCTOR ASM IP Holding B.V. (NL) 2026-04-08 EP claimed
US-20260096150-A1 TRANSISTOR, METHOD OF MANUFACTURING TRANSISTOR, AND ELECTRONIC DEVICE INCLUDING TRANSISTOR SAMSUNG DISPLAY CO LTD (KR) 2026-04-02 US claimed
US-20260085413-A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND A METHOD FOR MANUFACTURING OF A SEMICONDUCTOR ASM IP HOLDING BV (NL) 2026-03-26 US claimed
US-20260041086-A1 PROCESS FOR PREPARING COATED ORGANIC PARTICLES BASF SE (DE) 2026-02-12 US claimed
EP-4690275-A1 PROTECTIVE CAPPING LAYER FOR AREA SELECTIVE DEPOSITION Applied Materials, Inc. (US) 2026-02-11 EP claimed
EP-4688204-A1 ATOMIC LAYER DEPOSITION OF FILTRATION MEDIA Donaldson Company, Inc. (US) 2026-02-11 EP claimed
EP-0503001-A4 PROCESS FOR CHEMICAL VAPOR DEPOSITION OF TRANSITION METAL NITRIDES 1993-06-23 EP claimed
EP-0293439-B1 SEMI-INSULATING GROUP III-V BASED COMPOSITIONS AT&T Corp. (US) 1993-04-21 EP claimed
US-5192589-A Low-pressure chemical vapor deposition process for depositing thin titanium nitride films having low and stable resistivity MICRON TECHNOLOGY, INC. (US) 1993-03-09 US claimed
EP-0509233-A2 Process for producing ethylene-alpha-olefin copolymers SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 1992-10-21 EP claimed
EP-0503001-A1 PROCESS FOR CHEMICAL VAPOR DEPOSITION OF TRANSITION METAL NITRIDES. HARVARD COLLEGE (US) 1992-09-16 EP claimed
US-5139825-A PROCESS FOR CHEMICAL VAPOR DEPOSITION OF TRANSITION METAL NITRIDES PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 1992-08-18 US claimed
US-5104690-A Chemical vapor deposition of ferroelectric material SPIRE CORPORATION (US) 1992-04-14 US claimed
WO-1991008322-A1 PROCESS FOR CHEMICAL VAPOR DEPOSITION OF TRANSITION METAL NITRIDES PRESIDENT AND FELLOWS OF HARVARD COLLEGE (US) 1991-06-13 WO claimed
EP-0077279-B1 PROCESS FOR THE PREPARATION OF ORTHOHYDROXYBENZALDEHYDES RHONE-POULENC CHIMIE (FR) 1988-09-07 EP claimed
EP-0174743-A2 Process for transition metal nitrides thin film deposition MORTON THIOKOL, INC. (US) 1986-03-19 EP claimed