SCHEMBL4568744

SCHEMBL4568744

CC(=O)C(C)C(C)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 1/20 0.49
CYP2D6 P10635 1/20 0.44
SRC P12931 1/20 0.44
HPGD P15428 1/20 0.44
LMNA P02545 2/20 0.43
KMT2A Q03164 2/20 0.43
MAPK1 P28482 1/20 0.43
ALOX5 P09917 1/20 0.42
DPP4 P27487 1/20 0.41
CES2 O00748 1/20 0.41
CES1 P23141 1/20 0.41
MTNR1A P48039 1/20 0.41
MTNR1B P49286 1/20 0.41
SLC6A2 P23975 1/20 0.41
SLC6A4 P31645 1/20 0.41
SLC6A3 Q01959 1/20 0.41
MME P08473 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15342224 1.00 CYP3A4 (0.49) CYP3A4CYP2D6SRCHPGDLMNA
SCHEMBL7787872 0.84 CYP2D6 (0.52) CYP3A4CYP2D6SRCHPGDLMNA
SCHEMBL585192 0.84 CYP2D6 (0.52) CYP3A4CYP2D6SRCHPGDLMNA
SCHEMBL28842374 0.84 CYP2D6 (0.46) CYP2D6SRCLMNAKMT2AMAPK1
SCHEMBL6724975 0.82 CYP2D6 (0.44) CYP2D6SRCLMNAKMT2AMAPK1
SCHEMBL6689864 0.82 CYP2D6 (0.44) CYP3A4CYP2D6SRCHPGDLMNA
SCHEMBL10131915 0.80 CYP2D6 (0.54) CYP3A4CYP2D6SRCHPGDLMNA
SCHEMBL4443964 0.80 LMNA (0.54) CYP3A4CYP2D6HPGDLMNAKMT2A
SCHEMBL25896588 0.80 LMNA (0.54) CYP3A4CYP2D6HPGDLMNAKMT2A
SCHEMBL25896593 0.80 LMNA (0.54) CYP3A4CYP2D6HPGDLMNAKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 63 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9696622-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-07-04 US disclosed
US-9696627-B2 Compositions comprising base-reactive component and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-07-04 US disclosed
US-9563128-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2017-02-07 US disclosed
US-9507260-B2 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-11-29 US disclosed
US-9436082-B2 Compositions comprising base-reactive component and processes for photolithography ROHM AND HAAS ELECTRONICS MATERIALS LLC (US) 2016-09-06 US disclosed
US-20160070172-A1 COMPOSITIONS COMPRISING SULFONAMIDE MATERIAL AND PROCESSES FOR PHOTOLITHOGRAPHY U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2016-03-10 US disclosed
US-9274427-B2 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-03-01 US disclosed
WO-2016028571-A2 DIPEPTIDOMIMETICS AS INHIBITORS OF HUMAN IMMUNOPROTEASOMES CORNELL UNIVERSITY (US) 2016-02-25 WO disclosed
US-9244355-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS, LLC (US) 2016-01-26 US disclosed
US-20150378255-A1 COMPOSITIONS COMPRISING CARBOXY COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-12-31 US disclosed
US-7498115-B2 Photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2009-03-03 US disclosed
US-20080220597-A1 Photoresists and methods for use thereof ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2008-09-11 US disclosed
US-20080193872-A1 Applying on photoresist, a photoactive component, and material(s) having a water contact angle changeable by base treatment; activation by immersion exposing to radiation; reduced leaching; pentafluoroacrylate-ethyl cyclopentyl methacrylate-trimethylolpropane triacrylate terpolymer ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2008-08-14 US disclosed
US-7326518-B2 Photoresist compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2008-02-05 US disclosed
US-7297616-B2 Methods, photoresists and substrates for ion-implant lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-11-20 US disclosed
US-20070212646-A1 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-09-13 US disclosed
US-20070160930-A1 Coating compositions for photoresists ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-07-12 US disclosed
US-20070087286-A1 Compositions and processes for photolithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-04-19 US disclosed
US-20070072112-A1 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2007-03-29 US disclosed
US-7183037-B2 Antireflective coatings with increased etch rates SHIPLEY COMPANY, L.L.C. (US) 2007-02-27 US disclosed