2-Ethylhexanoic Acid

2-Ethylhexanoic Acid

SCHEMBL4579487

CCCCC(CC)C(=O)[O-].CCCCC(CC)C(=O)[O-].[BaH2].[Co].[Zn+2]

nearest known ligand 0.84

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Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CA2 P00918 10/20 0.84
MAPK1 P28482 2/20 0.57
CA1 P00915 7/20 0.55
CYP3A4 P08684 2/20 0.52
TSHR P16473 2/20 0.52
NFKB1 P19838 2/20 0.52
NPSR1 Q6W5P4 2/20 0.52
SLC1A3 P43003 1/20 0.40
SLC1A2 P43004 1/20 0.40
SLC1A1 P43005 1/20 0.40
USP2 O75604 1/20 0.39
CA7 P43166 1/20 0.39
CA14 Q9ULX7 1/20 0.39
MEN1 O00255 1/20 0.37
ALDH1A1 P00352 1/20 0.37
MAPT P10636 1/20 0.37
KMT2A Q03164 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
2-Ethylhexanoic Acid SCHEMBL10598238 0.96 CA2 (0.84) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL511291 0.96 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL15054 0.96 CA2 (0.91) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL26121503 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL11414553 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL23174742 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL28932204 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL9171656 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL10979983 0.94 CA2 (0.88) CA2MAPK1CA1CYP3A4TSHR
2-Ethylhexanoic Acid SCHEMBL31140169 0.92 CA2 (0.84) CA2MAPK1CA1CYP3A4TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8222076-B2 Fabricating amorphous zinc oxide semiconductor layer XEROX CORPORATION (US) 2012-07-17 US claimed
US-8222076-B2 Fabricating amorphous zinc oxide semiconductor layer XEROX CORPORATION (US) 2012-07-17 US disclosed
US-7906415-B2 Device having zinc oxide semiconductor and indium/zinc electrode XEROX CORPORATION (US) 2011-03-15 US disclosed
US-20080032444-A1 Fabricating amorphous zinc oxide semiconductor layer XEROX CORPORATION 2008-02-07 US disclosed
US-20080023698-A1 Device having zinc oxide semiconductor and indium/zinc electrode XEROX CORPORATION 2008-01-31 US disclosed
US-20070287221-A1 Fabrication process for crystalline zinc oxide semiconductor layer XEROX CORPORATION 2007-12-13 US disclosed