⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3117122 | 0.75 | TDP1 (0.33) | — | |
| SCHEMBL78967 | 0.70 | TDP1 (0.36) | — | |
| SCHEMBL17711070 | 0.67 | — | — | |
| SCHEMBL10024709 | 0.64 | TDP1 (0.31) | — | |
| SCHEMBL16405957 | 0.64 | TDP1 (0.40) | — | |
| SCHEMBL10628113 | 0.61 | TDP1 (0.73) | — | |
| SCHEMBL15135182 | 0.60 | — | — | |
| SCHEMBL15310104 | 0.60 | — | — | |
| SCHEMBL29115720 | 0.58 | — | — | |
| SCHEMBL472031 | 0.51 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 169 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-12421603-B2 | Composition for high temperature atomic layer deposition of high quality silicon oxide thin films | VERSUM MATERIALS US, LLC (US) | 2025-09-23 | — | — | US | claimed |
| US-20250270698-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | VERSUM MATERIALS US, LLC | 2025-08-28 | — | — | US | claimed |
| EP-4493734-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | Versum Materials US, LLC (US) | 2025-01-22 | — | — | EP | claimed |
| CN-119213168-A | Boron-containing precursors for ALD deposition of boron nitride films | 弗萨姆材料美国有限责任公司 | 2024-12-27 | — | — | CN | claimed |
| US-20240047196-A1 | SELECTIVE THERMAL ATOMIC LAYER DEPOSITION | VERSUM MAT US LLC (US) | 2024-02-08 | — | — | US | claimed |
| US-20240014036-A1 | SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION | VERSUM MATERIALS US, LLC | 2024-01-11 | — | — | US | claimed |
| CN-116918029-A | selective thermal atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-10-20 | — | — | CN | claimed |
| WO-2023201271-A1 | BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS | VERSUM MATERIALS US, LLC (US) | 2023-10-19 | — | — | WO | claimed |
| CN-116761906-A | Selective plasma enhanced atomic layer deposition | 弗萨姆材料美国有限责任公司 | 2023-09-15 | — | — | CN | claimed |
| US-20170256399-A9 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2017-09-07 | — | — | US | claimed |
| CN-103374708-B | High temperature atomic layer deposition of silicon oxide thin films | 气体产品与化学公司 | 2017-05-17 | — | — | CN | claimed |
| US-20160365244-A1 | High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2016-12-15 | — | — | US | claimed |
| CN-104962877-A | Compositions and methods for depositing silicon oxide films | AIR PROD & CHEM | 2015-10-07 | — | — | CN | claimed |
| US-20150275355-A1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-10-01 | — | — | US | claimed |
| EP-2924143-A1 | COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2015-09-30 | — | — | EP | claimed |
| US-20130295779-A1 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS | VERSUM MATERIALS US, LLC | 2013-11-07 | — | — | US | claimed |
| CN-103374708-A | High temperature atomic layer deposition of silicon oxide thin films | AIR PROD & CHEM | 2013-10-30 | — | — | CN | claimed |
| EP-2650399-A2 | High temperature atomic layer deposition of silicon oxide thin films | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2013-10-16 | — | — | EP | claimed |
| CN-101886255-A | Use contains the dielectric barrier deposition of nitrogen precursor | AIR PROD & CHEM | 2010-11-17 | — | — | CN | claimed |