SCHEMBL4591646

SCHEMBL4591646

CCOCC(C)O.COC(=O)C(C)O

nearest known ligand 0.43

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HSD17B10 Q99714 1/20 0.43
TSHR P16473 2/20 0.39
MAPT P10636 1/20 0.38
SMN1; SMN2 Q16637 2/20 0.34
ALDH1A1 P00352 2/20 0.33
MGAM O43451 1/20 0.33
GAA P10253 1/20 0.33
SI P14410 1/20 0.33
MGAM2 Q2M2H8 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CA14 Q9ULX7 2/20 0.32
ZDHHC7 Q9NXF8 1/20 0.32
MAPK1 P28482 1/20 0.31
ABCB1 P08183 1/20 0.31
CA12 O43570 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Ether SCHEMBL7624322 0.87 TSHR (0.43) HSD17B10TSHRMAPTSMN1; SMN2ALDH1A1
SCHEMBL4591693 0.86 HSD17B10 (0.45) HSD17B10TSHRMAPTALDH1A1MGAM
SCHEMBL20492095 0.85 HSD17B10 (0.67) HSD17B10TSHRMAPTSMN1; SMN2CA1
Methoxymethane SCHEMBL28415479 0.80 HSD17B10 (0.56) HSD17B10TSHRMAPTALDH1A1TDP1
SCHEMBL15671 0.80
SCHEMBL9636848 0.80
SCHEMBL15902740 0.80 HSD17B10 (0.62) HSD17B10TSHRMAPTALDH1A1TDP1
SCHEMBL6880828 0.80
Acetic Acid SCHEMBL60591 0.79 HSD17B10 (0.50) HSD17B10TSHRMAPTALDH1A1TDP1
SCHEMBL8684560 0.79 MGAM (0.44) HSD17B10TSHRSMN1; SMN2ALDH1A1MGAM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7425404-B2 Chemical amplification resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2008-09-16 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-20060046190-A1 Positive resist composition and pattern forming method utilizing the same FUJI PHOTO FILM CO., LTD. 2006-03-02 US disclosed
US-20060040208-A1 Chemical amplification resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2006-02-23 US disclosed