SCHEMBL460618

SCHEMBL460618

Oc1ccccc1-c1ccc2ccccc2c1O

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTPN22 Q9Y2R2 1/20 0.59
CYP1A2 P05177 3/20 0.52
LDHA P00338 1/20 0.46
POLB P06746 1/20 0.45
HSD17B10 Q99714 3/20 0.44
TSHR P16473 2/20 0.44
ALDH1A1 P00352 1/20 0.44
CYP2A6 P11509 1/20 0.44
TDP1 Q9NUW8 1/20 0.44
CYP2C19 P33261 4/20 0.44
CYP2C9 P11712 3/20 0.44
CYP3A4 P08684 2/20 0.44
CYP2D6 P10635 2/20 0.44
MEN1 O00255 1/20 0.44
TP53 P04637 1/20 0.44
MAPT P10636 1/20 0.44
KMT2A Q03164 1/20 0.44
USP2 O75604 1/20 0.44
PAK1 Q13153 1/20 0.44
HPGD P15428 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL374807 0.89 PTPN22 (0.65) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL29401627 0.89 PTPN22 (0.65) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL9419732 0.88 PTPN22 (0.79) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL5155985 0.87 PTPN22 (0.62) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL9060860 0.87 PTPN22 (0.62) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL1840828 0.87 PTPN22 (0.62) PTPN22CYP1A2LDHAPOLBHSD17B10
SCHEMBL4443508 0.85 PTPN22 (0.56) PTPN22CYP1A2LDHAHSD17B10TSHR
SCHEMBL8735056 0.83 PTPN22 (0.58) PTPN22CYP1A2LDHAHSD17B10TSHR
SCHEMBL6634384 0.83 PTPN22 (0.58) PTPN22CYP1A2LDHAPOLBHSD17B10
Hydrochloric Acid SCHEMBL29150394 0.82 PTPN22 (0.48) PTPN22CYP1A2POLBHSD17B10TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9045587-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-20140363768-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-12-11 US disclosed
US-8846846-B2 Naphthalene derivative, resist bottom layer material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-30 US disclosed
US-20120064725-A1 NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-03-15 US disclosed