SCHEMBL4649934

SCHEMBL4649934

[Bi+3].[Bi+3].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

HRH2

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15129704 1.00
SCHEMBL930930 0.87
SCHEMBL9571767 0.87
SCHEMBL864658 0.87
SCHEMBL887106 0.87
SCHEMBL7109941 0.87
SCHEMBL2028314 0.87
SCHEMBL7545738 0.82
SCHEMBL5016237 0.82
SCHEMBL1759637 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110354880-B Strontium bismuth oxygen-strontium carbonate composite photocatalyst, preparation method thereof and application of composite photocatalyst in catalytic reduction of hexavalent chromium 桂林电子科技大学 2022-06-07 CN claimed
US-6194227-B1 Method of producing a bismuth layer structured ferroelectric thin film SYMETRIX CORPORATION 2001-02-27 US claimed
CN-120129236-A Semiconductor device with a semiconductor layer having a plurality of semiconductor layers 三星电子株式会社 2025-06-10 CN disclosed
CN-119930019-A Piezoelectric photocatalysis reactor based on self-driven aeration stirring 兰州交通大学 2025-05-06 CN disclosed
CN-115745135-B Self-cleaning photoelectric integrated sewage treatment device and sewage treatment method 四川大学 2024-03-08 CN disclosed
CN-115745135-A Self-cleaning photoelectric integrated sewage treatment device and sewage treatment method 四川大学 2023-03-07 CN disclosed
CN-110354880-B Strontium bismuth oxygen-strontium carbonate composite photocatalyst, preparation method thereof and application of composite photocatalyst in catalytic reduction of hexavalent chromium 桂林电子科技大学 2022-06-07 CN disclosed
CN-110354880-B Strontium bismuth oxygen-strontium carbonate composite photocatalyst, preparation method thereof and application of composite photocatalyst in catalytic reduction of hexavalent chromium 桂林电子科技大学 2022-06-07 CN disclosed
CN-106531451-B A kind of Sr-Bi-C nano material, preparation method and its application 华北电力大学(保定) 2019-01-22 CN disclosed
CN-106531451-A Sr-Bi-C nanomaterial, preparation method and application thereof 华北电力大学(保定) 2017-03-22 CN disclosed
EP-1190988-B1 Bismuth-containing laser markable compositions and methods of making and using same FERRO GMBH (DE) 2008-09-10 EP disclosed
US-20060125746-A1 Microelectrical device ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) (CH) 2006-06-15 US disclosed
US-6680121-B2 MIXED OXIDE INORGANIC PIGMENTS DISPERSED IN A SUBSTRATE WHICH IS IRRADIATED BY A LASER TO PROVIDE A CONTRASTING MARK DMC2 DEGUSSA METALS CATALYSTS CERDEC AG (DE) 2004-01-20 US disclosed
US-20030108723-A1 Bismuth-containing laser markable compositions and methods of making and using same FERRO GMBH (DE) 2003-06-12 US disclosed
US-6503316-B1 Additive, pigment or colorant materials which may be used for laser marking. The materials comprise oxides of bismuth and at least one additional metal. Preferred laser-markable bismuth-containing oxide compounds are BIxMyOz and radiation DMC2 DEGUSSA METALS CATALYSTS CERDEC AG (DE) 2003-01-07 US disclosed
EP-1190988-A2 Bismuth-containing laser markable compositions and methods of making and using same dmc2 Degussa Metals Catalysts Cerdec AG (DE) 2002-03-27 EP disclosed
US-5885648-A PREPARING A BATCH OF LIQUID PRECURSOR OF SAID MIXED METAL OXIDE, FORMING A FIRST THIN FILM, ANALYZING, MODIFYING, FORMING SECOND THIN FILM RAYTHEON COMPANY (US) 1999-03-23 US disclosed