Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8584083 | 0.89 | — | — | |
| SCHEMBL4649951 | 0.87 | — | — | |
| SCHEMBL4649934 | 0.87 | — | — | |
| SCHEMBL3911824 | 0.87 | — | — | |
| SCHEMBL1897527 | 0.87 | — | — | |
| SCHEMBL15129704 | 0.87 | — | — | |
| SCHEMBL7109941 | 0.75 | — | — | |
| SCHEMBL7875461 | 0.75 | — | — | |
| SCHEMBL4928849 | 0.75 | — | — | |
| SCHEMBL20512286 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 368 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-117672704-A | Capacitor capable of releasing active oxygen ions and active nitrogen ions after being electrified | 张崇泰 | 2024-03-08 | — | — | CN | claimed |
| US-11640995-B2 | Ferroelectric field effect transistors (FeFETs) having band-engineered interface layer | INTEL CORPORATION (US) | 2023-05-02 | — | — | US | claimed |
| US-20200144293-A1 | FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFETS) HAVING AMBIPOLAR CHANNELS | INTEL CORP (US) | 2020-05-07 | — | — | US | claimed |
| US-20200105940-A1 | FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFETS) HAVING BAND-ENGINEERED INTERFACE LAYER | INTEL CORPORATION | 2020-04-02 | — | — | US | claimed |
| WO-2019054993-A1 | FERROELECTRIC FIELD EFFECT TRANSISTORS (FEFETS) HAVING AMBIPOLAR CHANNELS | INTEL CORPORATION (US) | 2019-03-21 | — | — | WO | claimed |
| US-20190019551-A1 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING NONVOLATILE MEMORY DEVICE | SK Hynix Inc. (KR) | 2019-01-17 | — | — | US | claimed |
| US-9831085-B2 | Method of fabricating hafnium oxide layer and semiconductor device having the same | SK Hynix Inc. (KR) | 2017-11-28 | — | — | US | claimed |
| US-20170004967-A1 | METHOD OF FABRICATING HAFNIUM OXIDE LAYER AND SEMICONDUCTOR DEVICE HAVING THE SAME | SK Hynix Inc. (KR) | 2017-01-05 | — | — | US | claimed |
| EP-2695018-B1 | NANOPARTICLE COMPLEX, LIGHT CONVERSION MEMBER AND DISPLAY DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME | LG INNOTEK CO LTD (KR) | 2016-12-28 | — | — | EP | claimed |
| US-8944619-B2 | Nanoparticle complex, light conversion member and display device having the same, and method for fabricating the same | LG INNOTEK CO., LTD. (KR) | 2015-02-03 | — | — | US | claimed |
| US-20100123176-A1 | SEMICONDUCTOR MEMORY DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-05-20 | — | — | US | claimed |
| US-20100067643-A1 | High dielectric insulated coax cable for sensitive impedance monitoring | GENERAL ELECTRIC COMPANY (US) | 2010-03-18 | — | — | US | claimed |
| US-20070020164-A1 | Process for producing fine metal oxide particles | SHOWA DENKO K.K. (JP) | 2007-01-25 | — | — | US | claimed |
| EP-1670716-A1 | PROCESS FOR PRODUCING FINE METAL OXIDE PARTICLES | Showa Denko K.K. (JP) | 2006-06-21 | — | — | EP | claimed |
| US-6882516-B2 | Thin film capacitor and method of manufacturing the same | FUJITSU LIMITED (JP) | 2005-04-19 | — | — | US | claimed |
| WO-2005021425-A1 | PROCESS FOR PRODUCING FINE METAL OXIDE PARTICLES | SHOWA DENKO K.K. (JP) | 2005-03-10 | — | — | WO | claimed |
| US-20030184952-A1 | Thin film capacitor and method of manufacturing the same | FUJITSU LIMITED (JP) | 2003-10-02 | — | — | US | claimed |
| US-5935549-A | Method of producing bismuth layered compound | SONY CORPORATION (JP) | 1999-08-10 | — | — | US | claimed |
| US-5792324-A | Method and apparatus of forming a thin film | LG SEMICON CO., LTD. (KR) | 1998-08-11 | — | — | US | claimed |
| US-5716875-A | Method for making a ferroelectric device | MOTOROLA, INC. (US) | 1998-02-10 | — | — | US | claimed |