⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL445607 | 0.89 | — | — | |
| SCHEMBL445908 | 0.60 | — | — | |
| SCHEMBL15008471 | 0.57 | — | — | |
| SCHEMBL19205820 | 0.55 | — | — | |
| SCHEMBL2749247 | 0.52 | — | — | |
| SCHEMBL365576 | 0.47 | — | — | |
| SCHEMBL8676258 | 0.47 | — | — | |
| SCHEMBL60477 | 0.46 | — | — | |
| SCHEMBL21643734 | 0.45 | — | — | |
| SCHEMBL9501082 | 0.43 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20050263901-A1 | SEMICONDUCTOR DEVICE FORMED BY IN-SITU MODIFICATION OF DIELECTRIC LAYER AND RELATED METHODS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-12-01 | — | — | US | claimed |
| US-6660656-B2 | Reacting one or more silicon compounds that contain carbon with an oxidizing gas at a constant radio frequency power level from about 10 W to about 200 W. | APPLIED MATERIALS INC. | 2003-12-09 | — | — | US | claimed |
| EP-1607493-B1 | Plasma processes for depositing low dielectric constant films | APPLIED MATERIALS INC (US) | 2008-12-10 | — | — | EP | disclosed |
| EP-1055012-B1 | PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | APPLIED MATERIALS INC (US) | 2006-02-08 | — | — | EP | disclosed |
| EP-1607493-A2 | Plasma processes for depositing low dielectric constant films | Applied Materials, Inc. (US) | 2005-12-21 | — | — | EP | disclosed |
| US-20050263901-A1 | SEMICONDUCTOR DEVICE FORMED BY IN-SITU MODIFICATION OF DIELECTRIC LAYER AND RELATED METHODS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-12-01 | — | — | US | disclosed |
| US-6660656-B2 | Reacting one or more silicon compounds that contain carbon with an oxidizing gas at a constant radio frequency power level from about 10 W to about 200 W. | APPLIED MATERIALS INC. | 2003-12-09 | — | — | US | disclosed |
| EP-1055012-A2 | PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | Applied Materials, Inc. (US) | 2000-11-29 | — | — | EP | disclosed |
| WO-1999041423-A2 | PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS | APPLIED MATERIALS, INC. (US) | 1999-08-19 | — | — | WO | disclosed |