⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7506111 | 0.87 | — | — | |
| SCHEMBL7654225 | 0.85 | — | — | |
| SCHEMBL5851125 | 0.81 | — | — | |
| SCHEMBL1373411 | 0.71 | — | — | |
| SCHEMBL7214676 | 0.70 | — | — | |
| SCHEMBL7577764 | 0.70 | — | — | |
| SCHEMBL28599503 | 0.69 | — | — | |
| SCHEMBL6919608 | 0.67 | — | — | |
| SCHEMBL14953923 | 0.65 | — | — | |
| SCHEMBL14953889 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11908697-B2 | Interconnect structure having a carbon-containing barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2024-02-20 | — | — | US | claimed |
| US-20230107176-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-06 | — | — | US | claimed |
| US-20210343535-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-04 | — | — | US | claimed |
| CN-119403957-A | Plasma enhanced low temperature atomic layer deposition of metals | 朗姆研究公司 | 2025-02-07 | — | — | CN | disclosed |
| CN-113130396-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-02-07 | — | — | CN | disclosed |
| CN-118434908-A | Metal deposition in recessed features using halogen-containing deposition inhibitors | 朗姆研究公司 | 2024-08-02 | — | — | CN | disclosed |
| CN-118402040-A | Low temperature molybdenum deposition assisted by silicon-containing reactants | 朗姆研究公司 | 2024-07-26 | — | — | CN | disclosed |
| US-11908697-B2 | Interconnect structure having a carbon-containing barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2024-02-20 | — | — | US | disclosed |
| US-20230107176-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-06 | — | — | US | disclosed |
| US-11527411-B2 | Interconnect structure having a carbon-containing barrier layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY (TW) | 2022-12-13 | — | — | US | disclosed |
| US-20210343535-A1 | Interconnect Structure Having a Carbon-Containing Barrier Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-04 | — | — | US | disclosed |
| US-20180337056-A1 | Interconnect Structure and Method of Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2018-11-22 | — | — | US | disclosed |
| US-20150228605-A1 | Interconnect Structure and Method of Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-08-13 | — | — | US | disclosed |
| US-7419699-B2 | CVD process for forming a thin film | TANAKA KIKINZOKU KOGYO K. K. (JP) | 2008-09-02 | — | — | US | disclosed |
| US-20080121181-A1 | CVD PROCESS FOR FORMING A THIN FILM | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2008-05-29 | — | — | US | disclosed |
| US-20050155552-A1 | CVD process for forming a thin film | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2005-07-21 | — | — | US | disclosed |
| US-6884463-B2 | CVD process for forming a thin film | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2005-04-26 | — | — | US | disclosed |
| US-6420582-B1 | ALKYLCYCLOPENTADIENYL(CYCLOPENTADIENYL)RUTHENIUM FOR MANUFACTURING A RUTHENIUM FILM OR A RUTHENIUM COMPOUND FILM BY CHEMICAL VAPOR DEPOSITION | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2002-07-16 | — | — | US | disclosed |
| US-20020065427-A1 | Organometallic compounds for chemical vapor deposition and their preparing processes, and processes for chemical vapor deposition of precious-metal films and precious-metal compound films | TANAKA KIKINOZOKU KOGYO K.K. | 2002-05-30 | — | — | US | disclosed |
| US-20010036509-A1 | CVD Process for forming a thin film | TANAKA KIKINZOKU KOGYO K.K | 2001-11-01 | — | — | US | disclosed |