SCHEMBL472234

SCHEMBL472234

O=[Ti].[PbH2].[Zr]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8042996 0.91
SCHEMBL1282124 0.91
SCHEMBL780274 0.89
SCHEMBL716347 0.89
SCHEMBL3171443 0.84
SCHEMBL578897 0.80
SCHEMBL7148695 0.80
SCHEMBL10519580 0.80
SCHEMBL7756016 0.80
SCHEMBL6657283 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1527 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12334897-B2 Bulk-acoustic wave resonator SAMSUNG ELECTRO-MECHANICS CO., LTD. (KR) 2025-06-17 US claimed
WO-2025053377-A1 WARMTH MEASUREMENT DEVICE, WARMTH MEASUREMENT SYSTEM, AND WARMTH MEASUREMENT METHOD THEREBY 재단법인대구경북과학기술원 2025-03-13 WO claimed
US-12206021-B2 Negative differential resistance device SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-01-21 US claimed
US-20240266417-A1 NEGATIVE CAPACITANCE TRANSISTOR WITH EXTERNAL FERROELECTRIC STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-08-08 US claimed
US-11961897-B2 Negative capacitance transistor with external ferroelectric structure TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2024-04-16 US claimed
US-11956594-B2 Two-way integrated speaker with piezoelectric diaphragm as tweeter APPLE INC. (US) 2024-04-09 US claimed
US-20240079496-A1 NEGATIVE DIFFERENTIAL RESISTANCE DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-03-07 US claimed
US-20240027722-A1 FLAT-SURFACED TUNABLE OPTICAL LENS META PLATFORMS TECHNOLOGIES, LLC (US) 2024-01-25 US claimed
US-11764292-B2 Negative-capacitance field effect transistor TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2023-09-19 US claimed
US-20230276711-A2 PIEZOELECTRIC LAMINATE, PRODUCTION METHOD FOR PIEZOELECTRIC LAMINATE, AND PIEZOELECTRIC ELEMENT SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-08-31 US claimed
CN-1337070-A Thin film piezoelectric element MITSUBISHI ELECTRIC CORP (JP) 2002-02-20 CN claimed
US-20020009855-A1 GATE INSULATOR PROCESS FOR NANOMETER MOSFETS LATTICE SEMICONDUCTOR CORPORATION 2002-01-24 US claimed
US-20010039087-A1 Dram trench capacitor INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-11-08 US claimed
US-6297086-B1 Application of excimer laser anneal to DRAM processing INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-10-02 US claimed
US-6222218-B1 DRAM trench INTERNATIONAL BUSINESS MACHINES CORPORATION 2001-04-24 US claimed
US-6090658-A Method of forming a capacitor including a bottom silicon diffusion barrier layer and a top oxygen diffusion barrier layer LG SEMICON CO., LTD. (KR) 2000-07-18 US claimed
EP-0987765-A2 DRAM trench capacitor International Business Machines Corporation (US) 2000-03-22 EP claimed
US-5539695-A Fast access multi-bit random access memory SOLIDAS CORPORATION (US) 1996-07-23 US claimed
WO-1996007774-A1 PREPARATION OF LEAD-ZIRCONIUM-TITANIUM FILM AND POWDER BY ELECTRODEPOSITION MIDWEST RESEARCH INSTITUTE (US) 1996-03-14 WO claimed
US-5462647-A Preparation of lead-zirconium-titanium film and powder by electrodeposition MIDWEST RESEARCH INSTITUTE (US) 1995-10-31 US claimed