SCHEMBL472331

SCHEMBL472331

O=C(O)C(O)CN1CCCCC1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 2/20 0.56
KMT2A Q03164 2/20 0.56
HSD17B10 Q99714 1/20 0.47
MAPT P10636 3/20 0.46
ATM Q13315 3/20 0.46
ANPEP P15144 1/20 0.44
ERAP2 Q6P179 1/20 0.44
ALDH1A1 P00352 3/20 0.43
HPGD P15428 1/20 0.43
SMN1; SMN2 Q16637 2/20 0.42
CYP1A2 P05177 1/20 0.42
MAPK1 P28482 1/20 0.42
GAA P10253 1/20 0.40
POLB P06746 1/20 0.40
CYP2D6 P10635 1/20 0.40
TSHR P16473 1/20 0.40
HIF1A Q16665 1/20 0.40
MAOB P27338 1/20 0.40
L3MBTL1 Q9Y468 1/20 0.39
ABCB1 P08183 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL838646 0.93 MEN1 (0.46) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL29943240 0.88 OR51E2 (0.43) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL10723639 0.81 MEN1 (0.54) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL19532370 0.80 MEN1 (0.54) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL5243190 0.80 MEN1 (0.54) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL11461136 0.79 ALDH1A1 (0.53) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL31757733 0.78 ALDH1A1 (0.61) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL5243859 0.77 MEN1 (0.50) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL5254183 0.77 MEN1 (0.50) MEN1KMT2AHSD17B10MAPTATM
SCHEMBL384886 0.76 DPP7 (0.55) MEN1KMT2AHSD17B10MAPTATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 107 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2202577-B1 Chemically amplified positive resist composition and resist patterning process SHINETSU CHEMICAL CO (JP) 2014-08-27 EP claimed
EP-2492746-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2019-11-20 EP disclosed
EP-2492747-B1 Chemically amplified negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2018-11-07 EP disclosed
EP-2270596-B1 Positive resist compostion and pattern forming process SHINETSU CHEMICAL CO (JP) 2018-07-25 EP disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
EP-2360527-B1 Patterning process using EB or EUV lithography SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360525-B1 Chemically amplified positive resist composition and pattern forming process SHINETSU CHEMICAL CO (JP) 2017-08-23 EP disclosed
EP-2360526-B1 Chemically amplified negative resist composition for E beam or EUV lithography and patterning process SHINETSU CHEMICAL CO (JP) 2017-08-16 EP disclosed
EP-2256552-B1 Negative resist composition and patterning process using the same SHINETSU CHEMICAL CO (JP) 2017-07-12 EP disclosed
EP-2256551-A1 Chemically amplified resist compositon and pattern forming process Shin-Etsu Chemical Co., Ltd. (JP) 2010-12-01 EP disclosed
EP-2253996-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-11-24 EP disclosed
US-20100291484-A1 Negative resist composition, patterning process, and testing process and preparation process of negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-11-18 US disclosed
EP-2244124-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244125-A2 Resist composition Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
EP-2244126-A2 Patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-10-27 EP disclosed
US-20100167207-A1 Chemically amplified positive resist composition and resist patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-01 US disclosed
EP-2202577-A1 Chemically amplified positive resist composition and resist patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2010-06-30 EP disclosed
EP-2146245-A2 Resist composition and patterning process Shinetsu Chemical Co., Ltd. (JP) 2010-01-20 EP disclosed
US-20100009299-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-01-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100009299-A1 Resist composition and patterning process ARF4, FGFR2, ARF5 MEN1 2928/4885KMT2A 81/4885HSD17B10 4318/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.