Fluoride

Fluoride

SCHEMBL4733595

F.F.F.F.F.F.S

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL8049348 1.00 OXTR (0.50)
Fluoride SCHEMBL1948471 1.00 OXTR (0.50)
Fluoride SCHEMBL18112526 1.00
Fluoride SCHEMBL19112265 1.00
Fluoride SCHEMBL23610939 1.00
Fluoride SCHEMBL22463719 1.00
Fluoride SCHEMBL23610938 1.00 OXTR (0.50)
Fluoride SCHEMBL393697 1.00
Fluoride SCHEMBL274533 1.00
Fluoride SCHEMBL875007 1.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-105305283-A Insulating resistance to compression electric power cabinet LI CONG 2016-02-03 CN claimed
US-9171939-B2 Method for manufacturing thin-film transistor and thin-film transistor manufactured with same SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2015-10-27 US claimed
US-20150137112-A1 Method for Manufacturing Thin-Film Transistor and Thin-Film Transistor Manufactured with Same SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2015-05-21 US claimed
US-8987739-B2 Semiconductor device and manufacturing method thereof AU OPTRONICS CORPORATION (TW) 2015-03-24 US claimed
US-20130168682-A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF AU OPTRONICS CORPORATION (TW) 2013-07-04 US claimed
CN-102222636-A Manufacturing method of shallow trench isolation SEMICONDUCTOR MFG INT SHANGHAI 2011-10-19 CN claimed
CN-101587835-B Manufacturing method for shallow groove SEMICONDUCTOR MFG INT BEIJING 2011-01-12 CN claimed
CN-101587835-A Manufacturing method for shallow groove SEMICONDUCTOR MFG INT BEIJING (CN) 2009-11-25 CN claimed
US-6374832-B2 Waferless seasoning process UNITED MICROELECTRONICS CORP. (TW) 2002-04-23 US claimed
US-20010046769-A1 WAFERLESS SEASONING PROCESS UNITED MICROELECTRONICS CORP. (TW) 2001-11-29 US claimed
US-11992811-B2 Crosslinked hollow-fibre membranes and new process for manufacturing the same EVONIK OPERATIONS GMBH (DE) 2024-05-28 US disclosed
CN-114409644-A Preparation method and application of fast photocuring benzoxazine and photocuring benzoxazine resin 中国科学院兰州化学物理研究所 2022-04-29 CN disclosed
US-20210394125-A1 CROSSLINKED HOLLOW-FIBRE MEMBRANES AND NEW PROCESS FOR MANUFACTURING THE SAME EVONIK OPERATIONS GMBH (DE) 2021-12-23 US disclosed
EP-3925692-A1 CROSSLINKED HOLLOW-FIBRE MEMBRANES AND A NEW PROCESS FOR MANUFACTURING THE SAME Evonik Fibres GmbH (AT) 2021-12-22 EP disclosed
US-10816441-B2 In situ measurement of soil fluxes and related apparatus, systems and methods E-FLUX, LLC (US) 2020-10-27 US disclosed
US-6374832-B2 Waferless seasoning process UNITED MICROELECTRONICS CORP. (TW) 2002-04-23 US disclosed
CN-2463944-Y Arc-extinguishing chamber for self thermal expansion tpye high-voltage sulphur hexafluoride circuit breaker XI AN HIGH TENSION SWITCH FACT (CN) 2001-12-05 CN disclosed
US-20010046769-A1 WAFERLESS SEASONING PROCESS UNITED MICROELECTRONICS CORP. (TW) 2001-11-29 US disclosed
US-5321221-A Self-disconnecting circuit-breaker for medium tension, and use thereof in a medium-tension station or bay GEC ALSTHOM SA (FR) 1994-06-14 US disclosed
CN-87105191-A columnar insulator 1988-02-03 CN disclosed