SCHEMBL4741777

SCHEMBL4741777

C1=CC2CC1CC2COC1CCCC1

nearest known ligand 0.38

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 6/20 0.38
ALDH1A1 P00352 2/20 0.38
TSHR P16473 1/20 0.33
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
HTT P42858 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22263780 0.98 KDM4E (0.37) KDM4EALDH1A1TSHRMEN1KMT2A
SCHEMBL11735013 0.98 KDM4E (0.37) KDM4EALDH1A1TSHRMEN1KMT2A
SCHEMBL13888339 0.84 KDM4E (0.35) KDM4EALDH1A1TSHR
SCHEMBL13888354 0.83 KDM4E (0.34) KDM4EALDH1A1TSHR
SCHEMBL14409141 0.80 KDM4E (0.37) KDM4EALDH1A1TSHRMEN1KMT2A
SCHEMBL5354320 0.77 MEN1 (0.33) KDM4EALDH1A1MEN1KMT2A
SCHEMBL415514 0.76 KDM4E (0.44) KDM4EALDH1A1TSHRMEN1KMT2A
SCHEMBL5360819 0.75 KDM4E (0.33) KDM4EALDH1A1TSHR
SCHEMBL5359706 0.75 KDM4E (0.34) KDM4EALDH1A1
SCHEMBL20712568 0.75 KDM4E (0.41) KDM4EALDH1A1TSHRMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11886119-B2 Material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2024-01-30 US disclosed
CN-110709774-B Underlayer film forming material, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2023-12-08 CN disclosed
US-20230185195-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2023-06-15 US disclosed
US-11599025-B2 Resin material for forming underlayer film, resist underlayer film, method of producing resist underlayer film, and laminate MITSUI CHEMICALS, INC. (JP) 2023-03-07 US disclosed
US-20200264511-A1 MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-08-20 US disclosed
EP-3693793-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD FOR PRODUCING RESIST UNDERLAYER FILM, AND LAYERED PRODUCT Mitsui Chemicals, Inc. (JP) 2020-08-12 EP disclosed
US-20200241419-A1 RESIN MATERIAL FOR FORMING UNDERLAYER FILM, RESIST UNDERLAYER FILM, METHOD OF PRODUCING RESIST UNDERLAYER FILM, AND LAMINATE MITSUI CHEMICALS, INC. (JP) 2020-07-30 US disclosed
CN-111183395-A Resin material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-05-19 CN disclosed
CN-110709774-A Material for forming underlayer film, resist underlayer film, method for producing resist underlayer film, and laminate 三井化学株式会社 2020-01-17 CN disclosed
US-20080199805-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS. U.S.A., INC. 2008-08-21 US disclosed
WO-2008098189-A1 PHOTOSENSITIVE COMPOSITIONS EMPLOYING SILICON-CONTAINING ADDITIVES FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-14 WO disclosed
US-4033982-A REACTING NORBORNENES WITH SULFUR GENERAL ELECTRIC COMPANY (US) 1977-07-05 US disclosed