SCHEMBL474573

SCHEMBL474573

CC(=O)OC(C)C(C)(C)O[SiH3]

nearest known ligand 0.44

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.44
CHRM2 P08172 1/20 0.34
CHRM4 P08173 1/20 0.34
CHRM1 P11229 1/20 0.34
TBXA2R P21731 1/20 0.34
GALR3 O60755 1/20 0.33
MAPT P10636 1/20 0.33
BLM P54132 1/20 0.33
SMN1; SMN2 Q16637 1/20 0.33
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1585487 0.75 TSHR (0.52) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL14752948 0.75 TSHR (0.52) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10297388 0.73 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL16250316 0.73 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10297387 0.73 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL3341119 0.72 KCNH2 (0.37) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL7040467 0.71 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10329372 0.71 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
Ammonia Solution, Strong SCHEMBL29031745 0.71 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL11684627 0.71 TSHR (0.38) TSHRCHRM2CHRM4CHRM1TBXA2R

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2412011-B1 CHEMICAL VAPOR DEPOSITION METHOD TOKYO ELECTRON LTD (JP) 2017-09-20 EP claimed
US-9212420-B2 Chemical vapor deposition method TOKYO ELECTRON LIMITED (JP) 2015-12-15 US claimed
EP-1482070-B1 MECHANICAL ENHANCER ADDITIVES FOR LOW DIELECTRIC FILMS AIR PROD & CHEM (US) 2015-11-11 EP claimed
EP-2412011-A1 CHEMICAL VAPOR DEPOSITION METHOD Tokyo Electron Limited (JP) 2012-02-01 EP claimed
US-20100247803-A1 Chemical vapor deposition method TOKYO ELECTRON LIMITED (JP) 2010-09-30 US claimed
WO-2010111313-A1 CHEMICAL VAPOR DEPOSITION METHOD TOKYO ELECTRON LIMITED (JP) 2010-09-30 WO claimed
US-20090096106-A1 ANTIREFLECTIVE COATINGS AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-04-16 US claimed
EP-2048700-A2 Antireflective coatings Air Products and Chemicals, Inc. (US) 2009-04-15 EP claimed
US-11164739-B2 Use of silicon structure former with organic substituted hardening additive compounds for dense OSG films VERSUM MATERIALS US, LLC (US) 2021-11-02 US disclosed
US-20190244810-A1 Use of Silicon Structure Former with Organic Substituted Hardening Additive Compounds for Dense OSG Films VERSUM MATERIALS US, LLC (US) 2019-08-08 US disclosed
EP-3121310-B1 METHOD FOR REMOVAL OF CARBON FROM AN ORGANOSILICATE MATERIAL VERSUM MAT US LLC (US) 2018-02-28 EP disclosed
EP-2199428-B1 Method for removal of carbon from an organosilicate material VERSUM MAT US LLC (US) 2018-01-24 EP disclosed
EP-2412011-B1 CHEMICAL VAPOR DEPOSITION METHOD TOKYO ELECTRON LTD (JP) 2017-09-20 EP disclosed
EP-3211121-A2 METHOD FOR REMOVAL OF CARBON FROM AN ORGANOSILICATE MATERIAL Air Products and Chemicals, Inc. (US) 2017-08-30 EP disclosed
US-6846515-B2 Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants AIR PRODUCTS AND CHEMICALS, INC. (US) 2005-01-25 US disclosed
US-20040241463-A1 Mechanical enhancer additives for low dielectric films VERSUM MATERIALS US, LLC 2004-12-02 US disclosed
EP-1482070-A1 Mechanical enhancer additives for low dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-12-01 EP disclosed
US-20030232137-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-12-18 US disclosed
US-20030198742-A1 Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants VERSUM MATERIALS US, LLC 2003-10-23 US disclosed
EP-1354980-A1 Method for forming a porous SiOCH layer. AIR PRODUCTS AND CHEMICALS, INC. (US) 2003-10-22 EP disclosed