Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.48 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.37 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.37 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.37 |
| ▸ | TBXA2R | P21731 | 1/20 | 0.37 |
| ▸ | GALR3 | O60755 | 1/20 | 0.35 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | BLM | P54132 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | TRPV1 | Q8NER1 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.30 |
| ▸ | GAA | P10253 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18156013 | 0.82 | TSHR (0.50) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL92811 | 0.82 | TSHR (0.50) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL16754716 | 0.82 | TSHR (0.32) | TSHR | |
| SCHEMBL8760081 | 0.82 | TSHR (0.50) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL16754719 | 0.80 | TSHR (0.31) | TSHR | |
| SCHEMBL14752948 | 0.79 | TSHR (0.52) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL1585487 | 0.79 | TSHR (0.52) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL14749094 | 0.78 | PRKCA (0.39) | — | |
| SCHEMBL27734435 | 0.78 | TSHR (0.46) | TSHRCHRM2CHRM4CHRM1TBXA2R | |
| SCHEMBL12856975 | 0.78 | TSHR (0.41) | TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9778567-B2 | Resist composition, method of forming resist pattern, polymeric compound, compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-10-03 | — | — | US | disclosed |
| US-9766541-B2 | Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-09-19 | — | — | US | disclosed |
| US-20160376233-A1 | POSITIVE-TYPE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, PHOTO-REACTIVE QUENCHER, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-12-29 | — | — | US | disclosed |
| US-9411227-B2 | Resist composition, method of forming resist pattern, compound, and polymeric compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-08-09 | — | — | US | disclosed |
| US-9354515-B2 | Resist composition, acid generator, polymeric compound and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-05-31 | — | — | US | disclosed |
| US-9244347-B2 | Resist composition, compound, polymeric compound and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2016-01-26 | — | — | US | disclosed |
| US-9207534-B2 | Nitrogen-containing monomer, polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-08 | — | — | US | disclosed |
| US-20150198881-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-07-16 | — | — | US | disclosed |
| US-9075304-B2 | Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-07-07 | — | — | US | disclosed |
| US-9057948-B2 | Resist composition for EUV or EB, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2015-06-16 | — | — | US | disclosed |
| US-20130143159-A1 | RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130137048-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-05-30 | — | — | US | disclosed |
| US-20130095427-A1 | RESIST COMPOSITION FOR EUV OR EB AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-04-18 | — | — | US | disclosed |
| US-20130071789-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-03-21 | — | — | US | disclosed |
| US-20130022911-A1 | POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2013-01-24 | — | — | US | disclosed |
| US-20120328993-A1 | METHOD OF PRODUCING POLYMERIC COMPOUND, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2012-12-27 | — | — | US | disclosed |
| US-20120183904-A1 | NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-07-19 | — | — | US | disclosed |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-08-04 | — | — | US | disclosed |
| US-20110183262-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-07-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20160376233-A1 | POSITIVE-TYPE RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, PHOTO-REACTIVE QUENCHER, AND POLYMERIC COMPOUND | RB1, RPL22, RPS21 | TSHR 3521/4885CHRM2 1668/4885CHRM4 2779/4885 |
| US-20120183904-A1 | NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | PARG, PCNA, PAM | TSHR 4708/4885CHRM2 3248/4885CHRM4 3072/4885 |
| US-20150198881-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND POLYMERIC COMPOUND | C9, SLC11A2, AR | TSHR 3677/4885CHRM2 1433/4885CHRM4 1909/4885 |
| US-20110189607-A1 | NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS | RPS4Y1, ETV6, RPS4X | TSHR 3175/4885CHRM2 1513/4885CHRM4 2537/4885 |
| US-20110236831-A1 | ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ADH1A, ADH1C, ADH5 | TSHR 4402/4885CHRM2 943/4885CHRM4 1285/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.