Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FKBP1A | P62942 | 2/20 | 0.35 |
| ▸ | RIPK1 | Q13546 | 1/20 | 0.31 |
| ▸ | HTT | P42858 | 1/20 | 0.31 |
| ▸ | CYP3A4 | P08684 | 3/20 | 0.30 |
| ▸ | HMGCR | P04035 | 3/20 | 0.30 |
| ▸ | USP2 | O75604 | 2/20 | 0.30 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.30 |
| ▸ | TSHR | P16473 | 2/20 | 0.30 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.30 |
| ▸ | ABCB11 | O95342 | 1/20 | 0.30 |
| ▸ | NR3C1 | P04150 | 1/20 | 0.30 |
| ▸ | PGR | P06401 | 1/20 | 0.30 |
| ▸ | ABCB1 | P08183 | 1/20 | 0.30 |
| ▸ | ADORA3 | P0DMS8 | 1/20 | 0.30 |
| ▸ | CYP2C8 | P10632 | 1/20 | 0.30 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.30 |
| ▸ | ADRB3 | P13945 | 1/20 | 0.30 |
| ▸ | GABRA1 | P14867 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15745516 | 0.85 | FKBP1A (0.39) | FKBP1ARIPK1 | |
| SCHEMBL13817668 | 0.84 | HTT (0.34) | HTTKDM4ESMN1; SMN2MAPT | |
| SCHEMBL12009252 | 0.83 | — | — | |
| SCHEMBL15745511 | 0.78 | SMN1; SMN2 (0.38) | CYP3A4HMGCRUSP2ALDH1A1TSHR | |
| SCHEMBL13154099 | 0.78 | FKBP1A (0.36) | FKBP1ARIPK1HTT | |
| SCHEMBL17245081 | 0.77 | PTPN1 (0.37) | FKBP1ARIPK1CYP3A4HMGCRUSP2 | |
| SCHEMBL47476 | 0.77 | PTPN1 (0.37) | FKBP1ARIPK1CYP3A4HMGCRUSP2 | |
| SCHEMBL11941655 | 0.77 | HMGCR (0.33) | FKBP1ARIPK1HMGCR | |
| SCHEMBL2759856 | 0.77 | HMGCR (0.31) | HTTHMGCR | |
| SCHEMBL17404438 | 0.75 | PTPN1 (0.34) | FKBP1ARIPK1CYP3A4HMGCRUSP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 597 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11803122-B2 | Chemical amplification-type photosensitive composition, photosensitive dry film, production method of patterned resist layer, production method of plated molded article, compound, and production method of compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-31 | — | — | US | disclosed |
| US-20230273521-A1 | CHEMICALLY AMPLIFIED PHOTOSENTIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-08-31 | — | — | US | disclosed |
| US-20230229084-A1 | CHEMICALLY AMPLIFIED PHOTOSENSITIVE COMPOSITION, PHOTOSENSITIVE DRY FILM, PRODUCTION METHOD OF SUBSTRATE HAVING TEMPLATE FOR PLATING, AND PRODUCTION METHOD OF PLATED ARTICLE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-20 | — | — | US | disclosed |
| US-9977328-B2 | Chemically amplified positive-type photosensitive resin composition for thick film | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-22 | — | — | US | disclosed |
| US-9897922-B2 | Method of forming pattern and developer for use in the method | FUJIFILM CORPORATION (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-20170315444-A1 | CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION | TOKYO OHKA KOGYO CO., LTD. (JP) | 2017-11-02 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-7189492-B2 | Photosensitive composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2007-03-13 | — | — | US | disclosed |
| US-20070054217-A1 | Positive photosensitive composition and pattern-forming method using the same | FUJI PHOTO FILM CO., LTD. | 2007-03-08 | — | — | US | disclosed |
| US-20070042290-A1 | resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits | FUJI PHOTO FILM CO., LTD. | 2007-02-22 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179578-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-20070031757-A1 | Positive photosensitive composition and method of pattern formation with the same | FUJI PHOTO FILM CO., LTD. | 2007-02-08 | — | — | US | disclosed |
| US-20070026343-A1 | Chemical amplification-type resist composition and production process thereof | FUJI PHOTO FILM CO., LTD. | 2007-02-01 | — | — | US | disclosed |
| US-7163776-B2 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7160666-B2 | Photosensitive resin composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-01-09 | — | — | US | disclosed |