⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16303837 | 0.81 | — | — | |
| SCHEMBL1053966 | 0.77 | — | — | |
| SCHEMBL16303836 | 0.76 | — | — | |
| SCHEMBL19565718 | 0.76 | — | — | |
| SCHEMBL19565721 | 0.74 | — | — | |
| SCHEMBL16303833 | 0.73 | — | — | |
| SCHEMBL10985445 | 0.67 | — | — | |
| SCHEMBL27507469 | 0.67 | — | — | |
| SCHEMBL14418639 | 0.67 | — | — | |
| SCHEMBL2339156 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1225194-B1 | Method of forming a dielectric interlayer film with organosilicon precursors | AIR PROD & CHEM (US) | 2008-10-01 | — | — | EP | claimed |
| US-6583048-B2 | Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. | AIR PRODUCTS AND CHEMICALS, INC. | 2003-06-24 | — | — | US | claimed |
| US-20020142579-A1 | ORGANOSILICON PRECURSORS FOR INTERLAYER DIELECTRIC FILMS WITH LOW DIELECTRIC CONSTANTS | VERSUM MATERIALS US, LLC | 2002-10-03 | — | — | US | claimed |
| EP-1225194-A2 | Method of forming a dielectric interlayer film with organosilicon precursors | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2002-07-24 | — | — | EP | claimed |
| EP-1225194-B2 | Method of forming a dielectric interlayer film with organosilicon precursors | AIR PROD & CHEM (US) | 2013-09-18 | — | — | EP | disclosed |
| EP-1225194-B1 | Method of forming a dielectric interlayer film with organosilicon precursors | AIR PROD & CHEM (US) | 2008-10-01 | — | — | EP | disclosed |