SCHEMBL4771523

SCHEMBL4771523

C#CO[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8520644 0.67
SCHEMBL9777724 0.67
SCHEMBL9721266 0.67
SCHEMBL2885270 0.65
SCHEMBL2082322 0.65
SCHEMBL1332124 0.65
SCHEMBL4699 0.65
SCHEMBL8520542 0.62
SCHEMBL9550655 0.61
SCHEMBL644103 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111644207-B Method for catalyzing dehydroboration of alkyne compounds 苏州大学 2023-05-12 CN claimed
CN-111644207-A Method for catalyzing dehydroboronation reaction of alkyne compound 苏州大学 2020-09-11 CN claimed
CN-100410420-C Method of forming low dielectric constant interlayer dielectric film AIR PROD & CHEM (US) 2008-08-13 CN claimed
EP-1191072-B1 Electropolymerization modified carbon black and articles including tires having at least one component containing such modified carbon black GOODYEAR TIRE & RUBBER (US) 2006-01-04 EP claimed
CN-1644753-A Method of forming low dielectric constant interlayer dielectric film AIR PROD & CHEM (US) 2005-07-27 CN claimed
US-6583048-B2 Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. AIR PRODUCTS AND CHEMICALS, INC. 2003-06-24 US claimed
US-20020142579-A1 ORGANOSILICON PRECURSORS FOR INTERLAYER DIELECTRIC FILMS WITH LOW DIELECTRIC CONSTANTS VERSUM MATERIALS US, LLC 2002-10-03 US claimed
CN-1367205-A Organosilicon precursors for low dielectric constant interlayer dielectric films AIR PROD & CHEM (US) 2002-09-04 CN claimed
EP-1225194-A2 Method of forming a dielectric interlayer film with organosilicon precursors AIR PRODUCTS AND CHEMICALS, INC. (US) 2002-07-24 EP claimed
EP-0626977-B1 ABC TRIBLOCK METHACRYLATE POLYMERS DU PONT (US) 1997-07-09 EP claimed
EP-0308867-B1 Alkenylsilylazetidinone intermediates for carbapenems SHIONOGI & CO (JP) 1995-07-26 EP claimed
EP-0096596-B2 Microelectronic device manufacture NEC CORP (JP) 1994-03-23 EP claimed
CN-111644207-B Method for catalyzing dehydroboration of alkyne compounds 苏州大学 2023-05-12 CN disclosed
CN-115974948-A Preparation method of etonogestrel 湖南科益新生物医药有限公司 2023-04-18 CN disclosed
WO-2020240400-A1 PROCESSES FOR PRODUCING ORTHOESTERS FROM ORGANOSULFUR COMPOUNDS SCE FRANCE (FR) 2020-12-03 WO disclosed
CN-111644207-A Method for catalyzing dehydroboronation reaction of alkyne compound 苏州大学 2020-09-11 CN disclosed
US-20190023815-A1 METHOD OF PREPARING RUBBER COMPOSITION INCLUDING SYNDIOTACTIC 1,2-POLYBUTADIENE KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) 2019-01-24 US disclosed
EP-1225194-B2 Method of forming a dielectric interlayer film with organosilicon precursors AIR PROD & CHEM (US) 2013-09-18 EP disclosed
EP-1225194-B1 Method of forming a dielectric interlayer film with organosilicon precursors AIR PROD & CHEM (US) 2008-10-01 EP disclosed
US-6583048-B2 Chemical vapor deposition from a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. AIR PRODUCTS AND CHEMICALS, INC. 2003-06-24 US disclosed