Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL4801735

CCCCC(CC)CO[Si]([O-])(O)O.C[N+](C)(C)C

nearest known ligand 0.44

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Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP3A4 P08684 6/20 0.44
TSHR P16473 4/20 0.44
TDP1 Q9NUW8 3/20 0.44
ATM Q13315 1/20 0.44
L3MBTL1 Q9Y468 1/20 0.43
ALDH1A1 P00352 8/20 0.42
CA2 P00918 3/20 0.40
RECQL P46063 1/20 0.37
LMNA P02545 3/20 0.35
MMP9 P14780 1/20 0.35
MMP8 P22894 1/20 0.35
MMP14 P50281 1/20 0.35
MAPK1 P28482 2/20 0.35
HSD17B10 Q99714 1/20 0.35
PRSS1 P07477 1/20 0.34
PRSS2 P07478 1/20 0.34
PRSS3 P35030 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL28752758 0.87 CYP3A4 (0.47) CYP3A4TSHRTDP1ATML3MBTL1
Tetramethylammonium Ion SCHEMBL27719784 0.86 CYP3A4 (0.46) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL27606059 0.80 CYP3A4 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
Lithium Ion SCHEMBL27606093 0.80 CYP3A4 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL9764748 0.80 ALDH1A1 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL27588440 0.80 CYP3A4 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
Potassium Ion SCHEMBL27588280 0.80 CYP3A4 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL10761478 0.80 ALDH1A1 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL27588262 0.80 CYP3A4 (0.50) CYP3A4TSHRTDP1ATML3MBTL1
SCHEMBL4812756 0.78 CYP3A4 (0.49) CYP3A4TSHRTDP1ATML3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7332446-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-02-19 US disclosed
US-20040188809-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-30 US disclosed