Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL4802828

C[N+](C)(C)C.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.48

Full drug profile on Sugi Atlas →

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CA2 P00918 16/20 0.48
CA1 P00915 15/20 0.48
MMP1 P03956 5/20 0.48
MMP2 P08253 5/20 0.48
MMP9 P14780 5/20 0.48
MMP8 P22894 5/20 0.48
MMP13 P45452 5/20 0.48
F2 P00734 4/20 0.39
PRSS1 P07477 4/20 0.39
PRSS2 P07478 4/20 0.39
PRSS3 P35030 4/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetramethylammonium Ion SCHEMBL8101336 1.00 CA2 (0.48) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL218101 0.98 CA2 (0.46) CA2CA1MMP1MMP2MMP9
Tetramethylammonium Ion SCHEMBL8104300 0.91 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6392842 0.88 CA2 (0.50) CA2CA1MMP1MMP2MMP9
SCHEMBL6913561 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL18917616 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL6914831 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9
Potassium Ion SCHEMBL544675 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL6914171 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9
SCHEMBL1496679 0.88 CA2 (0.54) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7384730-B2 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-10 US claimed
US-20060275697-A1 Top coating composition for photoresist and method of forming photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-07 US claimed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US claimed
US-4006064-A Process for the electrodeposition of chrome plate using fluorine-containing wetting agents BAYER AKTIENGESELLSCHAFT (DT) 1977-02-01 US claimed
US-7384730-B2 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2008-06-10 US disclosed
US-20060275697-A1 Top coating composition for photoresist and method of forming photoresist pattern using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-07 US disclosed
US-20060111550-A1 Top coating composition for photoresist and method of forming photoresist pattern using same SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US disclosed
US-6132928-A Coating solution for forming antireflective coating film TOKYO OHKA KOGYO CO., LTD. (JP) 2000-10-17 US disclosed
US-5783362-A Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition TOKYO OHKA KOGYO CO., LTD. (JP) 1998-07-21 US disclosed
US-5631314-A Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition TOKYO OHKA KOGYO CO., LTD. (JP) 1997-05-20 US disclosed
US-4055458-A Etching glass with HF and fluorine-containing surfactant BAYER AKTIENGESELLSCHAFT (DT) 1977-10-25 US disclosed
US-4041003-A Process for molding aromatic polycarbonates having perfluoroalkanesulphonic acid derivatives as mold release agents BAYER AKTIENGESELLSCHAFT (DT) 1977-08-09 US disclosed
US-4006064-A Process for the electrodeposition of chrome plate using fluorine-containing wetting agents BAYER AKTIENGESELLSCHAFT (DT) 1977-02-01 US disclosed